Surface kinetics modeling of silicon and silicon oxide plasma etching. III. Modeling of silicon oxide etching in fluorocarbon chemistry using translating mixed-layer representation

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 24, Issue 5, 2006, Pages 1920-1927

  Kwon, Ohseung ^a   Bai, Bo ^a   Sawin, Herbert H ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FLUORINE; GAS FLUX; MIXED LAYER MODEL; SILICON OXIDE;

CARBON; FLUORINE; MATHEMATICAL MODELS; SILICA; SILICON; SURFACE REACTIONS;

PLASMA ETCHING;

EID: 33748572319     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2336227     Document Type: Article

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