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Volumn 87, Issue 3, 2000, Pages 1060-1069

Surface kinetics and plasma equipment model for Si etching by fluorocarbon plasmas

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001720164     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371980     Document Type: Article
Times cited : (61)

References (33)
  • 23
    • 0002957075 scopus 로고
    • edited by L. G. Christophorou and D. W. Bouldin Pergamon, New York
    • M. Hayashi, in Gaseous Dielectrics V, edited by L. G. Christophorou and D. W. Bouldin (Pergamon, New York, 1987).
    • (1987) Gaseous Dielectrics V
    • Hayashi, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.