Integrated plasma equipment model for polysilicon etch profiles in an inductively coupled plasma reactor with subwafer and superwafer topography

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 4, 1997, Pages 1913-1921

  Hoekstra, Robert J ^a   Grapperhaus, Michael J ^a   Kushner, Mark J ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIELECTRIC MATERIALS; IONIC CONDUCTION; MATHEMATICAL MODELS; MONTE CARLO METHODS; PLASMA DEVICES; SILICON WAFERS;

INDUCTIVELY COUPLED PLASMA REACTOR; POLYSILICON; SUBWAFER TOPOGRAPHY; SUPERWAFER TOPOGRAPHY;

PLASMA ETCHING;

EID: 0031187015     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580659     Document Type: Article

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