Mechanism of selective SiO2/Si etching with fluorocarbon gases (CF4, C4F8) and hydrogen mixture in electron cyclotron resonance plasma etching system

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 14, Issue 5, 1996, Pages 2827-2834

  Doh, Hyun Ho ^a   Kim, Jung Hun ^a,b   Lee, Seok Hyun ^a   Whang, Ki Woong ^a  

^a Seoul National University   (South Korea)

^b Inha University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY (SPECIFIC GRAVITY); ELECTRON CYCLOTRON RESONANCE; EMISSION SPECTROSCOPY; FLUOROCARBONS; FREE RADICALS; HYDROGEN; MASS SPECTROMETRY; PRESSURE EFFECTS; SEMICONDUCTING SILICON; SILICA;

ACTINOMETERS; APPEARANCE MASS SPECTROMETRY; ELECTRON ENERGY; ETCH RATE; ETCH SELECTIVITY;

PLASMA ETCHING;

EID: 0030245374     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580231     Document Type: Article

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