-
1
-
-
0032023826
-
-
H.-C. Lin, C.-C. Chen, C.-H. Chien, S.-K. Hsein, M.-F. Wang, T.-S. Chao,J.-Y. Huang, and C.-Y. Chang, IEEE Electron Device Lett. 19, 68 (1998).
-
(1998)
IEEE Electron Device Lett.
, vol.19
, pp. 68
-
-
Lin, H.-C.1
Chen, C.-C.2
Chien, C.-H.3
Hsein, S.-K.4
Wang, M.-F.5
Chao, T.-S.6
Huang, J.-Y.7
Chang, C.-Y.8
-
5
-
-
0034225788
-
-
C.-C. Chen, H.-C. Lin, C.-Y. Chang, M.-S. Liang, C.-H. Chien, S.-K. Hsein, T.-Y. Huang, and T.-S. Chao, IEEE Trans. Electron Devices 47, 1355 (2000).
-
(2000)
IEEE Trans. Electron Devices
, vol.47
, pp. 1355
-
-
Chen, C.-C.1
Lin, H.-C.2
Chang, C.-Y.3
Liang, M.-S.4
Chien, C.-H.5
Hsein, S.-K.6
Huang, T.-Y.7
Chao, T.-S.8
-
7
-
-
27744593119
-
-
A. Haggag, N. Liu, D. Menke, and M. Moosa, Microelectron. Reliab. 45, 1855 (2005).
-
(2005)
Microelectron. Reliab.
, vol.45
, pp. 1855
-
-
Haggag, A.1
Liu, N.2
Menke, D.3
Moosa, M.4
-
8
-
-
0042164631
-
-
E. Y. Wu, J. Suné, W. Lai, A. Vayshenker, E. Nowak, and D. Harmon, Microelectron. Reliab. 43, 1175 (2003).
-
(2003)
Microelectron. Reliab.
, vol.43
, pp. 1175
-
-
Wu, E.Y.1
Suné, J.2
Lai, W.3
Vayshenker, A.4
Nowak, E.5
Harmon, D.6
-
10
-
-
17644380079
-
-
E. Wu, E. Nowak, A. Vayshenker, J. McKenna, D. Harmon, and R.-P. Volleitsen, IEEE Trans. Device Mater. Reliab. 1, 69 (2001).
-
(2001)
IEEE Trans. Device Mater. Reliab.
, vol.1
, pp. 69
-
-
Wu, E.1
Nowak, E.2
Vayshenker, A.3
McKenna, J.4
Harmon, D.5
Volleitsen, R.-P.6
-
15
-
-
0029514106
-
-
R. Degraeve, G. Groeseneken, R. Bellens, M. Depas, and H. E. Maes, Tech. Dig. - Int. Electron Devices Meet. 1995, 863.
-
Tech. Dig. - Int. Electron Devices Meet.
, vol.1995
, pp. 863
-
-
Degraeve, R.1
Groeseneken, G.2
Bellens, R.3
Depas, M.4
Maes, H.E.5
-
16
-
-
0008536196
-
-
R. Degraeve, G. Groeseneken, R. Bellens, J. L. Ogier, M. Depas, P. J. Roussel, and H. E. Maes, IEEE Trans. Electron Devices 45, 904 (1998).
-
(1998)
IEEE Trans. Electron Devices
, vol.45
, pp. 904
-
-
Degraeve, R.1
Groeseneken, G.2
Bellens, R.3
Ogier, J.L.4
Depas, M.5
Roussel, P.J.6
Maes, H.E.7
-
17
-
-
0033349281
-
-
M.-J. Chen, H.-T. Huang, J.-H. Chen, C.-W. Su, C.-S. Hau, and M.-S. Liang, IEEE Electron Device Lett. 20, 523 (1999).
-
(1999)
IEEE Electron Device Lett.
, vol.20
, pp. 523
-
-
Chen, M.-J.1
Huang, H.-T.2
Chen, J.-H.3
Su, C.-W.4
Hau, C.-S.5
Liang, M.-S.6
-
20
-
-
0036927324
-
-
M. A. Alam, R. K. Smith, B. E. Weir, and P. J. Silverman, Tech. Dig. - Int. Electron Devices Meet. 2002, 151.
-
Tech. Dig. - Int. Electron Devices Meet.
, vol.2002
, pp. 151
-
-
Alam, M.A.1
Smith, R.K.2
Weir, B.E.3
Silverman, P.J.4
-
23
-
-
0034318446
-
-
Y. C. Yeo, Q. Lu, W. C. Lee, T.-J. King, C. Hu, X. Wang, X. Guo, and T. P. Ma, IEEE Electron Device Lett. 21, 540 (2000).
-
(2000)
IEEE Electron Device Lett.
, vol.21
, pp. 540
-
-
Yeo, Y.C.1
Lu, Q.2
Lee, W.C.3
King, T.-J.4
Hu, C.5
Wang, X.6
Guo, X.7
Ma, T.P.8
-
27
-
-
0036648930
-
-
S. Rauf, W. Dauksher, S. Clemens, and K. Smith, J. Vac. Sci. Technol. A 20, 1177 (2002).
-
(2002)
J. Vac. Sci. Technol. A
, vol.20
, pp. 1177
-
-
Rauf, S.1
Dauksher, W.2
Clemens, S.3
Smith, K.4
|