Alternative gate dielectric materials

ECS Transactions

Volumn 3, Issue 3, 2006, Pages 479-497

  Van Elshocht, S ^a   Hardy, A ^b   De Gendt, S ^a,c   Adelmann, C ^a   Baumann, P K ^d   Brunco, D P ^a   Caymax, M ^a   Conard, T ^a   Delugas, P ^a   Lehnen, P ^d   Richard, O ^a   Rohr, E ^a   Shamiryan, D ^a   Vos, R ^a   Witters, T ^a   Zimmerman, P ^a   Van Bael, M K ^a,b   Mullens, J ^b   Meuris, M ^a   Heyns, M ^a  

^a IMEC   (Belgium)

^b HASSELT UNIVERSITY   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON COMPOUNDS; THRESHOLD VOLTAGE; TRANSISTORS; VOLTAGE CONTROL;

ALTERNATIVE HIGH-K MATERIALS; AQUEOUS CHEMICAL SOLUTION DEPOSITION; MATERIAL SCREENING; THRESHOLD VOLTAGE CONTROL;

DIELECTRIC MATERIALS;

EID: 33846943306     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355736     Document Type: Conference Paper

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