High-performance TaN/HfSiON/Si metal-oxide-semiconductor structures prepared by NH3 post-deposition anneal

Applied Physics Letters

Volumn 82, Issue 11, 2003, Pages 1757-1759

  Akbar, Mohammad Shahariar ^a   Gopalan, S ^a   Cho, H J ^a   Onishi, K ^a   Choi, R ^a   Nieh, R ^a   Kang, C S ^a   Kim, Y H ^a   Han, J ^a   Krishnan, S ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; ELECTRIC POTENTIAL; HYSTERESIS; LEAKAGE CURRENTS; SILICATES; THERMODYNAMIC STABILITY; TRANSCONDUCTANCE;

POST-DEPOSITION ANNEALING;

MOSFET DEVICES;

EID: 0037451239     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1544062     Document Type: Article

References (11)

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