Conduction band-edge states associated with the removal of d-state degeneracies by the Jahn-Teller effect

IEEE Transactions on Device and Materials Reliability

Volumn 5, Issue 1, 2005, Pages 65-83

  Lucovsky, Gerald ^a   Fulton, C C ^a   Zhang, Y ^a   Zou, Y ^a   Luning, J ^b   Edge, L F ^c   Whitten, J L ^a   Nemanich, R J ^a   Ade, H ^a   Schlom, D G ^c   Afanase'v, V V ^d   Stesmans, A ^d   Zollner, S ^e   Triyoso, D ^e   Rogers, B R ^f  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

^d UNIVERSITY OF LEUVEN   (Belgium)

^e FREESCALE SEMICONDUCTOR INC   (United States)

^f VANDERBILT UNIVERSITY   (United States)

Author keywords

Complex oxides; Conduction band edge states; D state degeneracy; High dielectrics; Jahn Teller splittings; Photoconductivity; Spectroscopic ellipsometry; X ray absorption spectroscopy

Indexed keywords

ABSORPTION SPECTROSCOPY; BAND STRUCTURE; DIELECTRIC MATERIALS; ELECTRONIC STRUCTURE; ELLIPSOMETRY; FIELD EFFECT TRANSISTORS; OPTICAL BEAM SPLITTERS; PHOTOCONDUCTIVITY; X RAYS;

COMPLEX OXIDES; CONDUCTION BAND EDGE STATES; D-STATE DEGENERACY; HIGH-Κ DIELECTRICS; JAHN-TELLER SPLITTINGS; SPECTROSCOPIC ELLIPSOMETRY; X-RAY ABSORPTION SPECTROSCOPY;

TRANSITION METALS;

EID: 20444477165     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2005.845804     Document Type: Article

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