Yb-doped Ni FUSI for the n-MOSFETs gate electrode application

IEEE Electron Device Letters

Volumn 27, Issue 3, 2006, Pages 160-162

  Chen, J D ^a   Yu, Hong Y ^b   Li, M F ^a   Kwong, D L ^c   van Dal, M J H ^d   Kittl, J A ^b   Lauwers, A ^b   Absil, P ^b   Jurczak, M ^b   Biesemans, S ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b IMEC   (Belgium)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^d PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Band edge workfunction; Fully silicided (FUSI); N MOSFETs; Ni Yb

Indexed keywords

DIELECTRIC MATERIALS; DOPING (ADDITIVES); ELECTRODES; NICKEL; OXIDES; RELIABILITY; TUNING; YTTERBIUM;

BAND EDGE WORKFUNCTION; FULLY SILICIDED (FUSI); GATE ELECTRODE APPLICATION; N-MOSFETS;

MOSFET DEVICES;

EID: 33644623928     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.870252     Document Type: Article

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