Si Segregation into Pr2O3 and La2O 3 high-k gate oxides

Applied Physics Letters

Volumn 86, Issue 4, 2005, Pages

  Lippert, G ^a   Dabrowski, J ^a   Melnik, V ^a   Sorge, R ^a   Wenger, Ch ^a   Zaumseil, P ^a   Mussig H J ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DIFFUSION; ELECTRON TUNNELING; LEAKAGE CURRENTS; OXIDES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEGREGATION (METALLOGRAPHY); SILICON;

DIFFUSION BARRIERS; ROOM TEMPERATURE (RT); TUNNELING CURRENTS;

PRASEODYMIUM COMPOUNDS;

EID: 13644278653     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1853521     Document Type: Article

References (8)

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3. H.-J. Müssig, J. Dabrowski, Ch. Wenger, G. Łupina, R. Sorge, P. Formanek, P. Zaumseil, and D. Schmeißer, Mater. Res. Soc. Symp. Proc. 811, D 7.10 (2004).
4. A. Fissel, J. Dabrowski, and H. J. Osten, J. Appl. Phys. 91, 8968 (2002).
5. D. Schmeißer, H.-J. Müssig, and J. Da̧browski, Appl. Phys. Lett. 85, 88 (2004).
6. H. Ono and T. Katsumata, Appl. Phys. Lett. 78, 1832 (2001).
7. J. Dabrowski and V. Zavodinsky, in Proceedings of the NIC Symposium, February 2004, Jülich, Germany, p. 171.
8. H. Iwai, S. Ohmi, S. Akama, C. Ohshima, A. Kikuchi, I. Kashiwagi, J. Taguchi, H. Yamamoto, J. Tonotani, Y. Kim, I. Ueda, A. Kuriyama, and Y. Yoshihara, Proc. IEDM, 2002, 625 (2002).