Properties of La-silicate high-K dielectric films formed by oxidation of La on silicon

Journal of Applied Physics

Volumn 93, Issue 3, 2003, Pages 1691-1696

  Gougousi, Theodosia ^a   Jason Kelly, M ^a   Terry, David B ^a   Parsons, Gregory N ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; INFRARED RADIATION; LANTHANUM; OXIDATION; PHYSICAL VAPOR DEPOSITION; SILICATES; SPUTTER DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICIDATION;

DIELECTRIC FILMS;

EID: 0037320225     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1531818     Document Type: Article

References (32)

1. S. I. Association, The International Technology Roadmap for Semiconductors (International SEMATECH Austin, TX, 1999).
2. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001) and references therein.
3. J.-P. Maria, D. Wicaksana, A. I. Kingon, B. Busch, H. Schulte, E. Garfunkel, and T. Gustafsson, J. Appl. Phys. 90, 918 (2001).
4. K. B. Hubbard and D. G. Schlom, J. Mater. Res. 11, 2757 (1996).
5. J. J. Chambers and G. N. Parsons, J. Appl. Phys. 90, 918 (2001).
6. D. Niu, R. W. Ashcraft, Z. Chen, S. Stemmer, and G. N. Parsons, Appl. Phys. Lett. 81(4), 676 (2002).
7. H. Yamada, T. Shimizu, and E. Suzuki, Jpn. J. Appl. Phys., Part 2 41, L368 (2002).
8. M. Copel, E. Cartier, and F. M. Ross, Appl. Phys. Lett. 78, 1607 (2001).
9. J. J. Chambers, B. W. Busch, W. H. Schulte, T. Gustafsson, E. Garfunkel, S. Wang, D. M. Maher, T. M. Klein, and G. N. Parsons, Appl. Surf. Sci. 181, 78 (2001).
10. http://rsb.info.nih.gov/ij/
11. N. Yang, K. W. Henson, J. R. Hauser, and J. J. Wortman, IEEE Trans. Electron Devices 46, 1464 (1999).
12. J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben, Handbook of X-ray Photoelectron Spectroscopy (Perkin-Elmer Corporation, Eden Prairie, MN, 1992)
13. Y. Uwamino, T. Ishizuka, and H. Yamatera, J. Electron Spectrosc. Relat. Phenom. 34, 67 (1984).
14. C. C. Hsu, J. Ho, J. J. Qian, Y. T. Wang, and Y. X. Wang, Vacuum 41, 1425 (1990).
15. R. D. Thompson, B. Y. Tsaur, and K. N. Tu, Appl. Phys. Lett. 38, 535 (1991).
16. H. Ono and T. Katsumata, Appl. Phys. Lett. 78, 1832 (2001).
17. J. J. Chambers and G. N. Parsons, Appl. Phys. Lett. 77, 2385 (2000).
18. J. C. Fitzmaurice, A. Hector, T. Rowley, and I. P. Parkin, Polyhedron 13, 235 (1994).
19. S. Stemmer, J.-P. Maria, and A. I. Kingon, Appl. Phys. Lett. 79, 102 (2001).
20. C. T. Kirk, Phys. Rev. B 38, 1255 (1988).
21. F. Petru and A. Muck, Z. Chem. 6, 386 (1966).
22. M. P. Rosynek and D. T. Magnuson, J. Catal. 46, 402 (1977).
23. S. Bernal, J. A. Diaz, R. Garcia, and J. M. Rodriguez-Izquierdo, J. Mater. Sci. 20, 537 (1985).
24. P. Caro and M. Lamaitre Blaise, C. R. Seances Acad. Sci., Ser. C 269, 687 (1969); P. Caro, J. C. Achard, and O. Pous, Colloq. Int. C. N. R. S. 1, 285 (1970); P. E. Caro, J. O. Sawyer, and L. Eyring, Spectrochim. Acta, Part A 28, 1167 (1972).
25. P. Caro and M. Lamaitre Blaise, C. R. Seances Acad. Sci., Ser. C 269, 687 (1969); P. Caro, J. C. Achard, and O. Pous, Colloq. Int. C. N. R. S. 1, 285 (1970); P. E. Caro, J. O. Sawyer, and L. Eyring, Spectrochim. Acta, Part A 28, 1167 (1972).
26. P. Caro and M. Lamaitre Blaise, C. R. Seances Acad. Sci., Ser. C 269, 687 (1969); P. Caro, J. C. Achard, and O. Pous, Colloq. Int. C. N. R. S. 1, 285 (1970); P. E. Caro, J. O. Sawyer, and L. Eyring, Spectrochim. Acta, Part A 28, 1167 (1972).
27. M. Nieminen, M. Putkonen, and L. Niinistö, Appl. Surf. Sci. 174, 155 (2001).
28. B. Klingenberg and M. A. Vannice, Chem. Mater. 8, 2755 (1996).
29. S. Guha, E. Cartier, M. A. Gribelyuk, N. A. Bojarczuk, and M. C. Copel, Appl. Phys. Lett. 77, 2710 (2000).
30. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
31. J. C. Wang, S. H. Chiao, C. L. Lee, T. F. Lei, Y. M. Lin, M. F. Wang, S. C. Chen, C. H. Yu, and M. S. Liang, J. Appl. Phys. 92, 3936 (2002).
32. M. Houssa, V. V. Afanas'ev, A. Stesmans, and M. M. Heyns, Appl. Phys. Lett. 79, 3134 (2001).