Characterization of field-effect transistors with La 2Hf 2O 7 and HfO 2 gate dielectric layers deposited by molecular-beam epitaxy

Journal of Applied Physics

Volumn 99, Issue 2, 2006, Pages

  Rittersma, Z M ^a   Hooker, J C ^a   Vellianitis, G ^a   Locquet, J P ^b   Marchiori, C ^b   Sousa, M ^b   Fompeyrine, J ^b   Pantisano, L ^c   Deweerd, W ^c   Schram, T ^c   Rosmeulen, M ^c   De Gendt, S ^c   Dimoulas, A ^d  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b IBM RESEARCH ZURICH   (Switzerland)

^c IMEC   (Belgium)

^d INSTITUTE OF MATERIALS SCIENCE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC LAYERS; HO GATE; METAL OXIDES; SHOCKLEY REED HALL RECOMBINATION;

CAPACITORS; CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRODES; ELECTRON MOBILITY; LANTHANUM COMPOUNDS; MOLECULAR BEAM EPITAXY; PHYSICAL VAPOR DEPOSITION; TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 31644438937     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2163985     Document Type: Article

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