Characterization of the VT-instability in SiO2 / HfO2 gate dielectrics

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2003, Pages 41-45

  Kerber, A ^a,c,e   Cartier, E ^b,c   Pantisano, L ^c   Rosmeulen, M ^c,d   Degraeve, R ^c   Kauerauf, T ^c,d   Groeseneken, G ^c,d   Maes, H E ^c,d   Schwalke, U ^e  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b IBM RESEARCH   (United States)

^c IMEC   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

^e DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Alternative Gate Dielectrics; Charge Pumping; Defect Band; HfO2; VT instability

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; ELECTRIC CHARGE; ELECTRON TUNNELING; SILICA;

CHARGE PUMPING;

DIELECTRIC MATERIALS;

EID: 0037972997     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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