Compatibility of polycrystalline silicon gate deposition with HfO 2 and Al2O3/HfO2 gate dielectrics

Applied Physics Letters

Volumn 81, Issue 7, 2002, Pages 1288-1290

  Gilmer, D C ^a   Hegde, R ^a   Cotton, R ^a   Garcia, R ^a   Dhandapani, V ^a   Triyoso, D ^a   Roan, D ^a   Franke, A ^a   Rai, R ^a   Prabhu, L ^a   Hobbs, C ^a   Grant, J M ^a   La, L ^a   Samavedam, S ^a   Taylor, B ^a   Tseng, H ^a   Tobin, P ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL THICKNESS; GATE COMPATIBILITY; GATE LEAKAGES; POLYCRYSTALLINE SILICON GATES;

ALUMINUM; CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; HAFNIUM OXIDES; PLATINUM; POLYSILICON;

GATE DIELECTRICS;

EID: 79956033787     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1499514     Document Type: Article

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