Silicate layer formation at Pr2O3/Si(001) interfaces

Applied Physics Letters

Volumn 85, Issue 1, 2004, Pages 88-90

  Schmeisser D ^a   Mussig H J ^b   Dabrowski J ^b  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CRYSTAL LATTICES; GATES (TRANSISTOR); MOS DEVICES; PHOTOELECTRON SPECTROSCOPY; PRASEODYMIUM COMPOUNDS; SILICA; SILICATES; SILICON; SYNCHROTRON RADIATION;

DEFECT DENSITY; HIGH CHANNEL MOBILITY; SILICATE LAYER FORMATION; ULTRATHIN GATE DIELECTRICS;

INTERFACES (MATERIALS);

EID: 3242730524     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1769582     Document Type: Article

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