A comprehensive physically based predictive model for radiation damage in MOS systems

IEEE Transactions on Nuclear Science

Volumn 45, Issue 6 PART 1, 1998, Pages 2413-2423

  Lenahan, P M ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; ELECTRIC CHARGE; ELECTRON SPIN RESONANCE SPECTROSCOPY; HOLE TRAPS; POINT DEFECTS; RADIATION DAMAGE; SEMICONDUCTOR DEVICE MODELS; STATISTICAL MECHANICS; THRESHOLD VOLTAGE;

INTERFACE TRAP FORMATION;

MOS DEVICES;

EID: 0032319588     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.736480     Document Type: Article

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