A physically based predictive model of Si/SiO2 interface trap generation resulting from the presence of holes in the SiO2

Applied Physics Letters

Volumn 71, Issue 21, 1997, Pages 3126-3128

  Lenahan, P M ^a   Conley Jr , J F ^b  

^a Pennsylvania State University   (United States)

^b DYNAMICS RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000225889     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120284     Document Type: Article

References (30)

1. R. J. Powell and G. F. Derbenwick, IEEE Trans. Nucl. Sci. 18, 99 (1971).
2. P. S. Winokur, H. E. Boesch, Jr., J. M. McGarrity, and F. B. McLean, J. Appl. Phys. 50, 3492 (1979).
3. T. P. Ma, G. A. Scoggan, and R. Leone, Appl. Phys. Lett. 27, 61 (1975).
4. S. K. Lai and D. R. Young, J. Appl. Phys. 52, 6231 (1981).
5. F. B. McLean, IEEE Trans. Nucl. Sci. 27, 1651 (1980).
6. 2 and Its Interfaces, edited by S. T. Pantelides (Pergammon, New York, 1978), p. 428.
7. N. S. Saks and M. G. Ancona, IEEE Trans. Nucl. Sci. 34, 1348 (1987).
8. H. E. Boesch, IEEE Trans. Nucl. Sci. 35, 1160 (1988).
9. R. E. Stahlbush and B. J. Mrstik, IEEE Trans. Nuel. Sci. 37, 1641 (1990).
10. B. J. Mrstik and R. W. Rendell, IEEE Trans. Nucl. Sci. 38, 1101 (1991).
11. J. F. Conley and P. M. Lenahan, Appl. Phys. Lett. 62, 40 (1993).
12. J. F. Conley and P. M. Lenahan, IEEE Trans. Nucl. Sci. 40, 1335 (1993).
13. P. M. Lenahan, K. L. Brower, P. V. Dressendorfer, and W. C. Johnson, IEEE Trans. Nucl. Sci. 28, 4105 (1981).
14. P. M. Lenahan and P. V. Dressendorfer, Appl. Phys. Lett. 41, 542 (1982).
15. P. M. Lenahan and P. V. Dressendorfer, J. Appl. Phys. 55, 3495 (1984).
16. R. L. Vranch, B. Henderson, and M. Pepper, Appl. Phys. Lett. 52, 1161 (1988).
17. H. Miki, M. Noguchi, K. Hokosawa, B. Kim, K. Asadam and T. Sugano, IEEE Trans. Electron Devices 35, 2245 (1988).
18. K. Awazu, K. Watanabe, and H. Kawazoe, J. Appl. Phys. 73, 8519 (1993).
19. E. H. Poindexter, G. J. Gerardi, M. E. Ruekel, P. J. Caplan, N. M. Johnson, and D. K. Biegelson, J. Appl. Phys. 56, 2844 (1984).
20. P. M. Lenahan and P. V. Dressendorfer, Appl. Phys. Lett. 44, 96 (1984).
21. P. M. Lenahan and P. V. Dressendorfer, IEEE Trans. Nucl. Sci. 30, 4602 (1983).
22. T. Takahaski, B. B. Triplett, K. Yokogawa, and T. Sugano, Appl. Phys. Lett. 26, 1339 (1987).
23. L. Lipkin, L. Rowan, A. Reisman, and C. K. Williams, J. Electrochem. Soc. 138, 2050 (1991).
24. K. L. Brower, P. M. Lenahan, and P. V. Dressendorfer, J. Appl. Phys. 41, 251 (1982).
25. Y. Nishi, T. Tanaka, and A. Ohwada, Jpn. J. Appl. Phys. 11, 85 (1972).
26. K. L. Brower, Phys. Rev. B 38, 9657 (1988).
27. L. Pauling, General Chemistry (Dover, New York, 1988).
28. G. J. Hu and W. C. Johnson, J. Appl. Phys. 54, 1441 (1983).
29. T. P. Ma and P. V. Dressendorfer, Ionizing Radiation Effects in MOS Devices and Circuits (Wiley, New York, 1989), and references therein.
30. P. M. Lenahan, J. F. Conley, Jr., and B. D. Wallace, J. Appl. Phys. 81, 6824 (1997).