A physically based predictive model of Si/SiO2 interface trap generation resulting from the presence of holes in the SiO2

Applied Physics Letters

Volumn 71, Issue 21, 1997, Pages 3126-3128

  Lenahan, P M ^a   Conley Jr , J F ^b  

^a The Pennsylvania State University   (United States)

^b DYNAMICS RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000225889     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120284     Document Type: Article

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