Thermodynamical calculation and experimental confirmation of the density of hole traps in si02 films

Japanese Journal of Applied Physics

Volumn 30, Issue 12A, 1991, Pages L1993-L1995

  Ohmameuda, Toshiaki ^a   Asada, Kunihiro ^a   Sugano, Takuo ^a   Ohji, Yuzuru ^b   Miki, Hiroshi ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

Entropy of lattice vibration; Hole trap; Low temperature oxygen anneal; Oxygen vacancy; Point defect; Si02 film; Stress near interface

Indexed keywords

ELECTRONIC PROPERTIES; SEMICONDUCTING SILICON--OXIDATION; THERMODYNAMIC PROPERTIES;

ELECTRONIC HOLE TRAPS;

SILICA;

EID: 0026406593     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.30.L1993     Document Type: Article

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