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Volumn , Issue , 1983, Pages 112-115
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TUNNELING DISCHARGE OF TRAPPED HOLES IN SILICON DIOXIDE.
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CAPACITORS;
SEMICONDUCTOR DEVICES, MOS;
AVALANCHE INJECTED HOLES;
MOS CAPACITORS;
SILICON DIOXIDE;
TRAPPED HOLES;
TUNNELING DISCHARGE;
TUNNELING MODEL;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 0020918475
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (124)
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References (5)
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