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Volumn 22, Issue 1-4, 1993, Pages 273-276
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High resolution spin dependent recombination study of hot carrier damage in short channel MOSFETs: 29Si hyperfine spectra
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRON EMISSION;
ELECTRON RESONANCE;
ELECTRON TRANSPORT PROPERTIES;
HOT CARRIERS;
INTERFACES (MATERIALS);
MAGNETIC RESONANCE MEASUREMENT;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DEVICE STRUCTURES;
SPECTRUM ANALYSIS;
TRANSISTORS;
DEFECT BACK BOND ANGLES;
ELECTRON SPIN RESONANCE (ESR);
ELECTRONIC LOCALIZATION;
HOT HOLE INJECTION INDUCED DAMAGE;
HYBRIDIZATION;
SILICON HYPERFINE SPECTRA;
SPIN DEPENDENT RECOMBINATION (SDR);
MOSFET DEVICES;
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EID: 0027642809
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/0167-9317(93)90172-2 Document Type: Article |
Times cited : (71)
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References (24)
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