High resolution spin dependent recombination study of hot carrier damage in short channel MOSFETs: 29Si hyperfine spectra

Microelectronic Engineering

Volumn 22, Issue 1-4, 1993, Pages 273-276

  Gabrys, J W ^a   Lenahan, P M ^a   Weber, W ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON EMISSION; ELECTRON RESONANCE; ELECTRON TRANSPORT PROPERTIES; HOT CARRIERS; INTERFACES (MATERIALS); MAGNETIC RESONANCE MEASUREMENT; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SPECTRUM ANALYSIS; TRANSISTORS;

DEFECT BACK BOND ANGLES; ELECTRON SPIN RESONANCE (ESR); ELECTRONIC LOCALIZATION; HOT HOLE INJECTION INDUCED DAMAGE; HYBRIDIZATION; SILICON HYPERFINE SPECTRA; SPIN DEPENDENT RECOMBINATION (SDR);

MOSFET DEVICES;

EID: 0027642809     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(93)90172-2     Document Type: Article

References (24)

1. 1 µm MOSFET VLSI technology: Part IV—Hot-electron design constraints
2. Observation of hot-hole injection in NMOS transistors using a modified floating-gate technique
3. A reliable approach to charge-pumping measurements in MOS transistors
4. Direct observation of interfacial point defects generated by channel hot hole injection in n-channel metal oxide silicon field effect transistors
5. Radiation-Induced Trivalent Silicon Defect Buildup at the Si-SiO2 Interface in MOS Structures