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Volumn 22, Issue 1-4, 1993, Pages 273-276

High resolution spin dependent recombination study of hot carrier damage in short channel MOSFETs: 29Si hyperfine spectra

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON EMISSION; ELECTRON RESONANCE; ELECTRON TRANSPORT PROPERTIES; HOT CARRIERS; INTERFACES (MATERIALS); MAGNETIC RESONANCE MEASUREMENT; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SPECTRUM ANALYSIS; TRANSISTORS;

EID: 0027642809     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(93)90172-2     Document Type: Article
Times cited : (71)

References (24)
  • 8
    • 0001466860 scopus 로고
    • Direct observation of interfacial point defects generated by channel hot hole injection in n-channel metal oxide silicon field effect transistors
    • (1991) Applied Physics Letters , vol.59 , pp. 3439
    • Krick1    Lenahan2    Dunn3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.