Electron and Hole Traps in SiO2 Films Thermally Grown on Si Substrates in Ultra-Dry Oxygen

IEEE Transactions on Electron Devices

Volumn 35, Issue 12, 1988, Pages 2245-2252

  Miki, Hiroshi ^a   Noguchi, Mitsuhiro ^a   Asada, Kunihiro ^a   Sugano, Takuo ^a   Yokogawa, Ken'etsu ^a   Kim, Bo Woo ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FILMS--GROWING; OXYGEN; SEMICONDUCTOR MATERIALS--CHARGE CARRIERS; STEAM;

ELECTRON TRAPS; HOLE TRAPS; PYROGENIC STEAM; ULTRADRY OXYGEN; WET-OXIDE FILMS;

SEMICONDUCTING SILICON;

EID: 0024123631     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.8799     Document Type: Article

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