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Volumn 40, Issue 9, 1989, Pages 6374-6380

Medium-range structural order and fractal annealing kinetics of radiolytic atomic hydrogen in high-purity silica

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Indexed keywords


EID: 0000146459     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.40.6374     Document Type: Article
Times cited : (28)

References (37)
  • 2
    • 84926596134 scopus 로고    scopus 로고
    • in The Physics and Technology of Amorphous SiO2, edited by R. A. B. Devine (Plenum, New York, 1988), p. 1.
  • 12
    • 84926590169 scopus 로고    scopus 로고
    • A. G. Revesz, B. J. Mrstik, and H. L. Hughes, in The Physics and Technology of Amorphous SiO2, edited by R. A. B. Devine (Plenum, New York, 1988), p. 297.
  • 24
    • 84926607130 scopus 로고    scopus 로고
    • Since the apparent peak in f at about 105 K in Fig. 1(a) was interpreted as an artifact due to the side reactions discussed in the text, we then chose the lowest possible value of f in Eq. (7), which includes these side reactions, to achieve the fits represented in Fig. 1(b).
  • 25
    • 84926546767 scopus 로고    scopus 로고
    • In the kinetic fits of Figs. 2 and 3, there are five parameters to be determined. Among these, W (the fraction of total hydrogen which obeys classical kinetics) is determined uniquely by the fraction of atomic hydrogen remaining when the fractal kinetics dominates at long times. The parameters ka[A] and kb[ H ]0 of the classical and the fractal kinetics were estimated by varying these quantities a decade at a time until a good fit was reached. The procedure was rather insensitive to kb[ H ]0 in the case of classical kinetics; however, in the case of fractal kinetics the temperature dependence of kb[ H ]0 was easily derived from the fitting procedure (see Table I).
  • 35
    • 84926587263 scopus 로고    scopus 로고
    • R. L. Pfeffer, in The Physics and Chemistry of SiO2 and the Si-SiO2 Interface, edited by C. R. Helms and B. E. Deal (Plenum, New York, 1988), p. 169.
  • 37
    • 84926596969 scopus 로고    scopus 로고
    • J. M. McGarrity, P. S. Winokur, H. E. Boesch, Jr., and F. B. McLean, in The Physics of SiO2 and Its Interfaces, edited by S. T. Pantelides (Pergamon, New York, 1978), p. 428.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.