Atomic hydrogen-induced degradation of the Si SiO2 structure

Microelectronic Engineering

Volumn 28, Issue 1-4, 1995, Pages 3-10

  Cartier, E ^a   Stathis, J H ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; FERMI LEVEL; HOT CARRIERS; HYDROGEN; PARAMAGNETIC RESONANCE; PLASMAS; RADIATION; SEMICONDUCTING SILICON; SILICA; THERMAL EFFECTS;

ATOMIC HYDROGEN; BANDGAP; SILICON DANGLING BONDS;

DEGRADATION;

EID: 0029324513     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00004-R     Document Type: Article

References (15)

1. The effect of hydrogen on trap generation, positive charge trapping, and time-dependent dielectric breakdown of gate oxides