Combined Effect of X-Irradiation and Forming Gas Anneal on the Hot-Carrier Response of MOS Oxides

IEEE Transactions on Nuclear Science

Volumn 40, Issue 6, 1993, Pages 1360-1366

  Milanowski, R J ^a   Pagey, M P ^a   Matta, A I ^a   Bhuva, B L ^a   Massengill, L W ^a   Kerns, S E ^a  

^a VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEFECTS; ELECTRON TRANSPORT PROPERTIES; HOT CARRIERS; OXIDES; PASSIVATION; RADIATION DAMAGE; SEMICONDUCTOR DEVICE MANUFACTURE; STABILITY; TRANSISTORS; X RAY LITHOGRAPHY;

ELECTRON INJECTION; FORMING GAS ANNEAL; HOT CARRIER INDUCED INSTABILITY;

MOS DEVICES;

EID: 0027841182     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.273531     Document Type: Article

References (35)

1. F. B. McLean, H. E. Boesch, Jr., and T. R. Oldham, “Electron-Hole Generation, Transport, and Trapping in SiO2 ” in Ionizing Radiation Effects in MOS Devices and Circuits, edited by T.P. Ma and Paul V. Dressendorfer, John Wiley and Sons, New York (1989), Ch. 3 p. 87.
2. N. M. Johnson, D. J. Bartelink, and M. Schulz, in The Physics of SiO2 and its Interfaces, edited by S. T. Pantelides, Pergamon, New York (1978), Ch. 8, pp. 421–427.
3. F. J. Feigl, W. B. Fowler, and K. L. Yip, “Oxygen Vacancy Model for the E'l Center in SiO2 ”, Sol. St. Comm. Vol. 14, p. 225 (1974).
4. P.M. Lenahan and P.V. Dressendorfer, “Hole traps and trivalent silicon centers in metal/oxide/silicon devices”, J. Appl. Phys. Vol. 55, 3495 (1984).
5. A. J. Lelis, T. R. Oldham, H. E. Boesch, Jr., F. B. McLean, “The Nature of the Trapped Hole Annealing Process, IEEE Trans. Nuc. Sci., Vol. 36, 1808 (1989).
6. J. M. Aitken and D. R. Young, “Electron Trapping by Radiation-Induced Charge in MOS Devices”, J. Appl. Phys. Vol. 47, 1196 (1976).
7. J. M. Aitken, D. R. Young, and K. Pan, “Electron Trapping in Electron-Beam Irradiated SiO2 ”, J. Appl. Phys. Vol. 49, 3386 (1978).
8. N.S. Saks and D. B. Brown, “Observation of H + Motion During Interface Trap Formation”, IEEE Trans. Nuc. Sci., Vol. 37, p. 1624 (1990).
9. D.B. Brown and N. S. Saks, “Initial Hydrogen Ion Profiles During Interface Trap Formation in MOS Devices”, IEEE Trans. Nuc. Sci., Vol. 39, 2236 (1992).
10. R. Gale, F.J. Feigl, C. W. Magee and D. R. Young, “Hydrogen migration under avalanche injection of electrons in Si metal-oxide-semiconductor capacitors”, J. Appl. Phys., Vol. 54, 6938 (1983).
11. I. Yoshii, K. Hama, and K. Hashimoto, “Role of Hydrogen at Poly-Si/SiO2 Interface in Trap Generation by Substrate Hot-Electron Injection”, IEEE/IRPS 136 (1992).
12. R. J. Milanowski et. al, “Interface State Passivation and Depassivation Under Uniform Inversion Layer Bias Conditions”, submitted for publication in Applied Physics Letters, December, 1993.
13. C. T. Sah, “Origin of Interface States and Oxide Charges Generated by Ionizing Radiation”, IEEE Trans. Nuc. Sci. Vol. 23, 1563 (1976).
14. C. M. Svensson, Proc. of Intl. Conf. on Phys. of SiO2 and Its Interfaces, Pergamon, New York (1978), p. 328.
15. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, John Wiley and Sons, New York (1982), Ch. 11, p. 532.
16. S. K. Lai, “Interface Trap Generation in Silicon Dioxide when Electrons are Captured by Trapped Holes”, J. Appl. Phys. Vol. 54, 2540 (1983).
17. D. M. Fleetwood et. al, “Effects of oxide traps, interface traps, and “border traps” on metal-oxide-semiconductor devices”, J. Appl. Phys. Vol. 73, 5058 (1993).
18. A useful review of the role of hydrogen in interface state formation is given in T. R. Oldham et. al, “An Overview of Radiation-Induced Interface Traps in MOS Structures” Technical Report HDL-TR-2163 (1989).
19. F. B. McLean, “A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures”, IEEE Trans. Nuc. Sci. Vol. 27, 1651 (1980).
20. P. M. Lenahan, P. V. Dressendorfer, K.L. Brower, and W.C. Johnson, “Radiation-Induced Trivalent Silicon Defect Buildup at the Si-SiO2 Interface in MOS Structures”, IEEE Trans. Nucl. Sci., Vol. 28, 4105(1981).
21. P. M. Lenahan and P. V. Dressendorfer, “An Electron Spin Resonance Study of Radiation-Induced Electrically Active Paramagnetic Centers at the Si/SiO2 Interface”, J. Appl. Phys. Vol. 54, 1457 (1983).
22. D. L. Griscom, “Diffusion of radiolytic molecular hydrogen as a mechanism for the post-irradiation buildup of interface states in SiO2-on-Si structures”, J. Appl. Phys. Vol. 58, 2524 (1985).
23. D. B. Brown, “The Time Dependence of Interface State Production”, IEEE Trans. Nuc. Sci. Vol. 32, 3900 (1985).
24. D. L. Griscom, “Hydrogen Model for Radiation-Induced Interface States in SiO2-on-Si Structures: A Review of the Evidence”, J. Electronic Materials Vol. 21, 763 (1992).
25. A. J. Lelis and T. R. Oldham, “X-Ray Lithography Effects on MOS Oxides”, IEEE Trans. Nuc. Sci. Vol. 39, 2204 (1992).
26. A. G. Revesz, “The Role of Hydrogen in SiO2 Films on Silicon”, J. Electrochem. Soc. Vol. 126, 122 (1979).
27. L. Do Thanh and P. Balk, “Elimination and Generation of Si-SiO2 Interface Traps by Low Temperature Hydrogen Annealing”, J. Electrochem. Soc.: SOLID-STATE SCIENCE AND TECHNOLOGY, 1797, (1988)
28. A. J. Lelis, T. R. Oldham, and W. M. DeLancey, “Response of Interface Traps During High-Temperature Anneals”, IEEE Trans. Nuc. Sci. Vol. 38, 1590 (1991).
29. J. F. Conley and P. M. Lenahan, “Room Temperature Reactions Involving Silicon Dangling Bond Centers and Molecular Hydrogen in Amorphous SiO2 Thin Films on Silicon”, IEEE Trans. Nuc. Sci Vol. 39, 2186 (1992).
30. Conversion from the typical lithographic metric of mJ/cm 2 to RAD delivered to a device oxide requires analysis of the energy transport through and absorption by overlayers; i.e., this is a non-trivial conversion. For a reasonable explanation of the issues and an approach to establishing correspondence between these measures, see P. A. Miller et. al, “Damage due to electron, ion, and x-ray lithography”, J. Appl. Phys. Vol. 69, 488 (1991).
31. T. H. Ning and H. N. Yu, “Optically induced injection of hot electrons into J. Appl. Phys., Vol 45, 5373 (1974).
32. This field is typical of traditional bulk oxide trap characterization studies.
33. P. J. McWhorter and P. S. Winokur, “Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistors”, Appl. Phys. Lett. Vol. 48, 133 (1986).
34. C.T. Sune, A. Reisman and C. K. Williams, “A New Electron-Trapping Model for the Gate Insulator of Insulated Gate Field-Effect Transistors” Journal of Electronic Materials, Vol. 19, 651 (1990).
35. N.S. Saks and D. B. Brown, “Interface Trap Formation Via the Two-Stage H+ Process”, IEEE Trans. Nuc. Sci. 38, 1848 (1989).