Observation of H+ motion during interface trap formation

IEEE Transactions on Nuclear Science

Volumn 37, Issue 6, 1990, Pages 1624-1631

  Saks, N S ^a   Brown, D B ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; HYDROGEN; IONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES--SEMICONDUCTOR INSULATOR BOUNDARIES;

HOLE TRAPPING; TIME DEPENDENCE;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0025590783     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.101170     Document Type: Article

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