SPATIAL DEPENDENCE OF TRAPPED HOLES DETERMINED FROM TUNNELING ANALYSIS AND MEASURED ANNEALING.

IEEE Transactions on Nuclear Science

Volumn NS-33, Issue 6, 1986, Pages

  Oldham, T R ^a   Lelis, A J ^a   McLean, F B ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS - MATHEMATICAL MODELS; SEMICONDUCTOR MATERIALS - CHARGE CARRIERS;

ELECTRON TUNNELING MODEL; POST-RADIATION RESPONSE; TRAPPED HOLES;

SEMICONDUCTOR DEVICES, MOS;

EID: 0022865241     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (27)