Spin dependent recombination at the silicon/silicon dioxide interface

Colloids and Surfaces

Volumn 45, Issue C, 1990, Pages 191-211

  Lenahan, P M ^a   Jupina, M A ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS - RESONANCE; SEMICONDUCTING SILICON - CRYSTALLINE; SEMICONDUCTOR DEVICES - RADIATION EFFECTS; SEMICONDUCTOR DEVICES, MOS - DEFECTS; SILICA - AMORPHOUS;

SDR EFFECT; SEMICONDUCTOR INTERFACES; SHOCKLEY READ HALL RECOMBINATION; SILICON SILICON DIOXIDE INTERFACE; SPIN DEPENDENT RECOMBINATION; SPIN DEPENDENT RECOMBINATION (SDR);

TRANSISTORS, FIELD EFFECT;

EID: 0025419448     PISSN: 01666622     EISSN: None     Source Type: Journal    
DOI: 10.1016/0166-6622(90)80023-W     Document Type: Article

References (49)

1. Viscous Shear Flow Model for MOS Device Radiation Sensitivity
2. Process Optimization of Radiation-Hardened CMOS Integrated Circuits
3. Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I
4. Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance II
5. Radiation-Induced Trivalent Silicon Defect Buildup at the Si-SiO2 Interface in MOS Structures
6. Radiation-Induced Defect Centers in Thermally Grown Oxide Films
7. Radiation-Induced Paramagnetic Defects in MOS Structures
8. Microstructural Variations in Radiation Hard and Soft Oxides Observed through Electron Spin Resonance
9. The Nature of the Deep Hole Trap in MOS Oxides
10. Effects of ionizing radiation on oxidized silicon surfaces and planar devices
11. Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurements
12. Spatial Dependence of Trapped Holes Determined from Tunneling Analysis and Measured Annealing
13. XPS Studies of Structure-Induced Radiation Effects at the Si/SiO2 Interface
14. Radiation-Induced Defects in SiO2 as Determined with XPS