HOLE REMOVAL IN THIN-GATE MOSFETS BY TUNNELING.

IEEE Transactions on Nuclear Science

Volumn NS-32, Issue 6, 1985, Pages

  Benedetto, J M ^a   Boesch Jr , H E ^a   McLean, F B ^a   Mize, J P ^a  

^a US Army Research Development and Engineering Command   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS - TUNNELING; HEAT TREATMENT - ANNEALING; SEMICONDUCTOR DEVICES, MOS - ELECTRONIC PROPERTIES;

HOLE REMOVAL; MOSFETS;

TRANSISTORS, FIELD EFFECT;

EID: 0022201163     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)