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Journal of Applied Physics

Volumn 55, Issue 10, 1984, Pages 3495-3499

Hole traps and trivalent silicon centers in metal/oxide/silicon devices

(2) Lenahan, P M a Dressendorfer, P V a

a SANDIA NATIONAL LABORATORIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC RESONANCE; SEMICONDUCTING SILICON;

SEMICONDUCTOR DEVICES, MOS;

EID: 0021427238 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.332937 Document Type: Article

Times cited : (604)

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