Super Recovery of Total Dose Damage in MOS Devices

IEEE Transactions on Nuclear Science

Volumn 31, Issue 6, 1984, Pages 1427-1433

  Johnston, Allan H ^a  

^a BOEING COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FAILURE ANALYSIS; INTEGRATED CIRCUITS - RADIATION EFFECTS; RADIATION EFFECTS - MATHEMATICAL MODELS;

GATE THRESHOLD VOLTAGE; NMOS INTEGRATED CIRCUITS; TOTAL DOSE DAMAGE;

SEMICONDUCTOR DEVICES, MOS;

EID: 0021609581     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1984.4333524     Document Type: Article

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