Dependence of interface-state buildup on hole generation and transport in irradiated MOS capacitors

IEEE Transactions on Nuclear Science

Volumn 23, Issue 6, 1976, Pages 1580-1585

  Winokur, P S ^a   McGarrity, J M ^a   Boesch, H E ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES - SEMICONDUCTOR INSULATOR BOUNDARIES;

SEMICONDUCTOR DEVICES, MIS;

EID: 0017217554     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1976.4328543     Document Type: Article

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