Post-irradiation behavior of the interface state density and the trapped positive charge

IEEE Transactions on Nuclear Science

Volumn 37, Issue 6, 1990, Pages 1641-1649

  Stahlbush, R E ^a   Mrstik, B J ^a   Lawrence, R K ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b ARACOR ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; HYDROGEN;

INTERFACE STATES; TRAPPED CHARGES;

SEMICONDUCTOR DEVICES, MOS;

EID: 0025682742     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.101173     Document Type: Article

References (26)

1. 2/Si Structures,” Appl. Phys. Lett. 51, 270 (1987).
2. R.E. Stahlbush, R.K. Lawrence, H.L. Hughes, and N.S. Saks, “Annealing of Total Dose Damage: Redistribution of Interface State Density on <100>, <110>, and <111> Orientation Silicon,” IEEE Trans. Nucl. Sci. NS-35, 1192 (1988).
3. 2Interfacial Defect Transformation After Ionizing Radiation,” IEEE Trans. Nucl. Sci. NS-35, 1227 (1988).
4. C. Barnes, T. Zietlow, and K.Nakamura, “The Application of Deep Level Transient Spectroscopy to the Measurement of Radiation-Induced Interface State Spectra,” IEEE Trans. Nucl. Sci. NS-35, 1197 (1988).
5. P.J. McWhorter, D.M. Fleetwood, R.A. Pastorek, and G.T. Zimmerman, “Comparison of MOS Capacitor and Transistor Postirradiation Response,” IEEE Trans. Nucl. Sci. NS-36, 1792 (1989).
6. A.J. Lelis, H.E. Boesch, Jr., T.R. Oldham, and F.B. McLean, “Reversibility of Trapped Hole Annealing,” IEEE Trans. Nucl. Sei. NS-35, 1186 (1988).
7. J.R. Schwank, P.S. Winokur, P.J. McWhorter, F.W. Sexton, P.V. Dressendorfer, and D.C. Turpin, “Physical Mechanisms Contributing to Device ‘Rebound’,” IEEE Trans. Nucl. Sci. NS-31, 1434 (1984).
8. 2by X-ray and Co-60 Radiations,” IEEE Trans. Nucl. Sci. NS-32, 4363 (1985).
9. R.A. Kohler, R.A Kushner, and K.H. Lee, “Total Dose Radiation Hardness of MOS Devices in Hermetic Ceramic Packages,” IEEE Trans. Nucl. Sci. NS-35, 1492 (1988).
10. 2MOS Structures,” IEEE Trans. Nucl. Sci. NS-27, 1651 (1980).
11. +Process,” IEEE Trans. Nucl. Sci. NS-36, 1848 (1989).
12. G.Groeseneken, H.E. Maes, N. Beltran, and R.F. Keersmaecker, “A Reliable Approach to Charge-Pumping Measurements in MOS Transistors,” IEEE Trans. Elec. Dev. ED-31, 42 (1984).
13. N.S. Saks and M.G. Ancona, “Determination of Interface Trap Capture Cross Sections Using Three-Level Charge Pumping,” IEEE Elec. Dev. Lett. ED-11, 339 (1990).
14. T.J. Russell, H.S. Bennett, M. Gaitan, J.S. Schule, and P. Roitman, “Correlation between CMOS Transistor and Capacitor Measurement of Interface Trap Spectra,” IEEE Trans. Nucl. Sci. NS-33, 1228 (1986).
15. N.S. Saks and M.G. Ancona, “Generation of Interface States by Ionizing Radiation at 80 K Measured by Charge Pumping and Subthreshold Slope Techniques,” IEEE Trans. Nucl. Sci. NS-34, 1348 (1987).
16. P.S. Winokur, J.R. Schwank, P.J. McWhorter, P.V. Dressendorfer, and D.C. Turpin, “Correlating the Radiation Response of MOS Capacitors and Transistors,” IEEE Trans. Nucl. Sci. NS-31, 1453 (1984).
17. See T.R. Oldham, A.J. Lelis, and F.B. McLean, “Spacial Dependence of Trapped Holes Determined from Tunneling Analysis and Measured Annealing,” IEEE Trans. Nucl. Sci. NS-33, 1203 (1986), and references therein.
18. +Motion during Interface Trap Formation,” IEEE Trans. Nucl. Sci. NS-37, Dec. 1990.
19. S.K. Lai, “Two-Carrier Nature of Interface-State Generation in Hole Trapping and Radiation Damage,” Appl. Phys. Lett. 39, 58 (1981).
20. G. Hu and W.C. Johnson, “Relationship Between X-ray-Produced Holes and Interfaces State in MOS Capacitors,” J. Appl. Phys. 54, 1441 (1983).
21. S.J. Wang, J.M. Sung, and S.A. Lyon, “Relationship Between Hole Trapping and Interface State Generation in MOS Structures,” Appl. Phys. Lett. 52, 1431 (1988).
22. 2Interfaces, edited by C.R. Helms and B.E. Deal (Plenum Press, 1988), p. 287.
23. S. Wolf and R.N. Tauber, Silicon Processing for the VLSI Era (Lattice Press, Sunset Beach, CA, 1987), p. 262.
24. Y. Wang, T.P.Ma, and R.C. Barker, “Orientation Dependence of Interface-Trap Trap Transformation,” IEEE Trans. Nucl. Sci. NS-36, 1784 (1989).
25. 2Interface,” Phys. Rev. B36, 9638 (1987).
26. A.J. Lelis, T.R. Oldham, H.E. Boesch, Jr., and F.B. McLean, “The Nature of the Trapped Hole Annealing Process,” IEEE Trans. Nucl. Sci. NS-36, 1808 (1989).