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Journal of Applied Physics

Volumn 45, Issue 1, 1974, Pages 317-321

Effect of gamma-ray irradiation on the surface states of MOS tunnel junctions

(2) Ma, T P a Barker, R C a

a YALE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MIS;

EID: 0015971461 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1662978 Document Type: Article

Times cited : (24)

References (24)

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- We choose a uniform charge density for simplicity.
- It can be easily seen that for a trap distribution such that it decays away from the [formula omitted] interface as in Ref. 2 the shift for the 50-Å MOS will be more than 0. 35 V.

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.