A spin dependent recombination study of radiation induced defects at and near the si/sio2 interface

IEEE Transactions on Nuclear Science

Volumn 36, Issue 6, 1989, Pages 1800-1807

  Jupina, M A ^a   Lenahan, P M ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; INTEGRATED CIRCUITS; RADIATION DAMAGE; SEMICONDUCTING SILICON--DEFECTS;

ELECTRON SPIN RESONANCE; RADIATION DAMAGE CENTERS;

SEMICONDUCTOR DEVICES, MOS;

EID: 0024890327     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.45372     Document Type: Article

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