-
1
-
-
0019279479
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Interface-State State Generation in Radiation-Hard Oxides
-
P. S. Winokur and H. E. Boesch, Jr., “Interface-State State Generation in Radiation-Hard Oxides,” IEEE Trans. Nucl. Sci., NS-27, pp. 1647–1650 (1980).
-
(1980)
IEEE Trans. Nucl. Sci.
, vol.NS-27
, pp. 1647-1650
-
-
Winokur, P.S.1
Boesch, H.E.2
-
2
-
-
0020900953
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Radiation-Induced Interface States of Poly-Si Gate MOS Capacitors Using Low Temperature Gate Oxidation
-
K. Naruke, M. Yoshida, K. Maeguchi, and H. Tango, “Radiation-Induced Interface States of Poly-Si Gate MOS Capacitors Using Low Temperature Gate Oxidation,” IEEE Trans. Nucl. Sci. NS-30, pp. 4054–4058 (1983).
-
(1983)
IEEE Trans. Nucl. Sci.
, vol.NS-30
, pp. 4054-4058
-
-
Naruke, K.1
Yoshida, M.2
Maeguchi, K.3
Tango, H.4
-
3
-
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0021617164
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Charge and Interface State Generation in Field Oxides
-
H. E. Boesch, Jr., and T. L. Taylor, “Charge and Interface State Generation in Field Oxides,” IEEE Trans. Nucl. Sci. NS-31, pp. 1273–1279 (1984).
-
(1984)
IEEE Trans. Nucl. Sci.
, vol.NS-31
, pp. 1273-1279
-
-
Boesch, H.E.1
Taylor, T.L.2
-
4
-
-
84939068629
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Generation of Interface States by Ionizing Radiation in Very Thin MOS Oxides
-
N. S. Saks, M. G. Ancona, J. A. Modolo, “Generation of Interface States by Ionizing Radiation in Very Thin MOS Oxides,” IEEE Trans. Nucl. Sci. NS-33, pp. 1185–1190 (1986).
-
(1986)
IEEE Trans. Nucl. Sci.
, vol.NS-33
, pp. 1185-1190
-
-
Saks, N.S.1
Ancona, M.G.2
Modolo, J.A.3
-
5
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-
28544447964
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It should be noted that Pease, et al. did observe a hard saturation of Dit. However, the saturation was probably due to space-charge effects (ΔVt large in comparison to VG) and not due to the exhaustion of pre-cursor defects
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It should be noted that Pease, et al., IEEE Trans. Nucl. Sci., NS-32, pp 3946–3952 (1985) did observe a hard saturation of Dit. However, the saturation was probably due to space-charge effects (ΔVt large in comparison to VG) and not due to the exhaustion of pre-cursor defects.
-
(1985)
IEEE Trans. Nucl. Sci.
, vol.NS-32
, pp. 3946-3952
-
-
-
6
-
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0022895666
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Saturation of Threshold Voltage Shift in MOSFET's at High Total Dose
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H. E. Boesch, Jr., F. B. McLean, J. M. Benedetto, and J. M. McGarrity, “Saturation of Threshold Voltage Shift in MOSFET's at High Total Dose,” IEEE Trans. Nucl. Sci., NS-33, pp 1191–1197 (1986).
-
(1986)
IEEE Trans. Nucl. Sci.
, vol.NS-33
, pp. 1191-1197
-
-
Boesch, H.E.1
McLean, F.B.2
Benedetto, J.M.3
McGarrity, J.M.4
-
7
-
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0019242095
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A Framework for Understanding Radiation-Induced Interface State in SiO2 MOS Structures
-
F. B. McLean, “A Framework for Understanding Radiation-Induced Interface State in SiO2 MOS Structures,” IEEE Trans. Nucl. Sci. NS-27, pp. 1651–1657 (1980).
-
(1980)
IEEE Trans. Nucl. Sci.
, vol.NS-27
, pp. 1651-1657
-
-
McLean, F.B.1
-
8
-
-
0020751109
-
Interface Trap Generation in Silicon Dioxide When Electrons are Captured by Trapped Holes
-
S. K. Lai, “Interface Trap Generation in Silicon Dioxide When Electrons are Captured by Trapped Holes,” J. Appl. Phys. 54, pp. 2540–2546 (1983).
-
(1983)
J. Appl. Phys.
, vol.54
, pp. 2540-2546
-
-
Lai, S.K.1
-
9
-
-
0346840948
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Diffusion of Radiolytic Molecular Hydrogen as a Mechanism for the Post-Irradiation Buildup of Interface States in SiO2-On-Si Structures
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D. L. Griscom, “Diffusion of Radiolytic Molecular Hydrogen as a Mechanism for the Post-Irradiation Buildup of Interface States in SiO2-On-Si Structures,” J. Appl. Phys. 58, pp. 2524–2533 (1985).
-
(1985)
J. Appl. Phys.
, vol.58
, pp. 2524-2533
-
-
Griscom, D.L.1
-
10
-
-
0022865689
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The Relationship Between 60Co and 10 keV X-Ray Damage in MOS Devices
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J. M. Benedetto and H. E. Boesch, Jr., “The Relationship Between 60Co and 10 keV X-Ray Damage in MOS Devices,” IEEE Trans. Nucl. Sci. NS-33, pp. 1318–1323 (1986).
-
(1986)
IEEE Trans. Nucl. Sci.
, vol.NS-33
, pp. 1318-1323
-
-
Benedetto, J.M.1
Boesch, H.E.2
-
11
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0021201529
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A Reliable Approach to Charge Pumping Measurements in MOS Transistors
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G. Groeseneken, H. E. Maes, N. Beltran, and R. F. DeKeersmaecker, “A Reliable Approach to Charge Pumping Measurements in MOS Transistors,” IEEE Trans. Electron Devices, ED-31, pp. 42–53 (1984).
-
(1984)
IEEE Trans. Electron Devices
, vol.ED-31
, pp. 42-53
-
-
Groeseneken, G.1
Maes, H.E.2
Beltran, N.3
DeKeersmaecker, R.F.4
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12
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0004005306
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Physics of Semiconductor Devices
-
John Wiley and Sons, New York
-
S. M. Sze, “Physics of Semiconductor Devices,” (John Wiley and Sons, New York, 1981) pp. 446–451.
-
(1981)
, pp. 446-451
-
-
Sze, S.M.1
-
13
-
-
0021605304
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Correlating the Radiation Response of MOS Capacitors and Transistors
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P. S. Winokur, J. R. Schwank, P. J. McWhorter, P. V. Dressendorfer, and D. C. Turpin, “Correlating the Radiation Response of MOS Capacitors and Transistors,” IEEE Trans. Nucl. Sci., NS-31, pp. 1453–1460 (1984).
-
(1984)
IEEE Trans. Nucl. Sci.
, vol.NS-31
, pp. 1453-1460
-
-
Winokur, P.S.1
Schwank, J.R.2
McWhorter, P.J.3
Dressendorfer, P.V.4
Turpin, D.C.5
-
14
-
-
0021602022
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MOSFET and MOS Capacitor Responses to Ionizing Radiation
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J. M. Benedetto and H. E. Boesch, Jr., “MOSFET and MOS Capacitor Responses to Ionizing Radiation,” IEEE Trans. Nucl. Sci., NS-31, pp. 1461–1466 (1984).
-
(1984)
IEEE Trans. Nucl. Sci.
, vol.NS-31
, pp. 1461-1466
-
-
Benedetto, J.M.1
Boesch, H.E.2
-
15
-
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0022247785
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Defect Production in SiO2 By X-Ray and Co-60 Irradiations
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C. M. Dozier, D. B. Brown, J. I. Throckmorton, and D. I. Ma, “Defect Production in SiO2 By X-Ray and Co-60 Irradiations,” IEEE Trans. Nucl. SciK., NS-32, pp. 4363–4368 (1985).
-
(1985)
IEEE Trans. Nucl. Sci.
, vol.NS-32
, pp. 4363-4368
-
-
Dozier, C.M.1
Brown, D.B.2
Throckmorton, J.I.3
Ma, D.I.4
-
16
-
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0022232569
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Accounting for Dose Enhancement Effects with CMOS Transistors
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D. M. Fleetwood, P.S. Winokur, R. W. Beegle, P. V. Dressendorfer, and B. L. Draper, “Accounting for Dose Enhancement Effects with CMOS Transistors,” IEEE Trans. Nucl. Sci., NS-32, pp. 4369–4375 (1985).
-
(1985)
IEEE Trans. Nucl. Sci.
, vol.NS-32
, pp. 4369-4375
-
-
Fleetwood, D.M.1
Winokur, P.S.2
Beegle, R.W.3
Dressendorfer, P.V.4
Draper, B.L.5
-
17
-
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0001649726
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Effect of Bias on the Response of Metal-Oxide-Semiconductor Devices to Low-Energy X-Ray and Cobalt-60 Irradiation
-
D. M. Fleetwood, P. S. Winokur, C. M. Dozier, and D.B. Brown, “Effect of Bias on the Response of Metal-Oxide-Semiconductor Devices to Low-Energy X-Ray and Cobalt-60 Irradiation,” Appl. Phys. Lett. 52, pp. 1514–1516 (1988).
-
(1988)
Appl. Phys. Lett.
, vol.52
, pp. 1514-1516
-
-
Fleetwood, D.M.1
Winokur, P.S.2
Dozier, C.M.3
Brown, D.B.4
-
18
-
-
0023533304
-
An Evaluation of Low-Energy X-Ray and Cobalt-60 Irradiations of MOS Transistors
-
C M. Dozier, D. M. Fleetwood, D. B. Brown, and P. S. Winokur, “An Evaluation of Low-Energy X-Ray and Cobalt-60 Irradiations of MOS Transistors,” IEEE Trans. Nucl. Sci., NS-34, pp. 1535–1539 (1987).
-
(1987)
IEEE Trans. Nucl. Sci.
, vol.NS-34
, pp. 1535-1539
-
-
Dozier, C.M.1
Fleetwood, D.M.2
Brown, D.B.3
Winokur, P.S.4
-
19
-
-
0022915765
-
Use of the Subthreshold Behavior to Compare X-Ray and Co-60 Radiation Induced Defects in MOS Transistors
-
C. M Dozier, D.B. Brown, R. K. Freitag, and J. L. Throckmorton, “Use of the Subthreshold Behavior to Compare X-Ray and Co-60 Radiation Induced Defects in MOS Transistors,” IEEE Trans. Nucl. Sci., NS-33, pp. 1324–1329 (1986).
-
(1986)
IEEE Trans. Nucl. Sci.
, vol.NS-33
, pp. 1324-1329
-
-
Dozier, C.M.1
Brown, D.B.2
Freitag, R.K.3
Throckmorton, J.L.4
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