Fundamental chemical differences among Pb defects on (111) and (100) silicon

Applied Physics Letters

Volumn 58, Issue 15, 1991, Pages 1641-1643

  Stathis, J H ^a   Dori, L ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b CNR   (Italy)

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EID: 21544462058     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.105244     Document Type: Article

References (11)