Passivation and depassivation of silicon dangling bonds at the Si/SiO 2 interface by atomic hydrogen

Applied Physics Letters

Volumn 63, Issue 11, 1993, Pages 1510-1512

  Cartier, E ^a   Stathis, J H ^a   Buchanan, D A ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

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EID: 0000394608     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.110758     Document Type: Article

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