메뉴 건너뛰기




Volumn 35, Issue 6, 1988, Pages 1497-1505

Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATORS, LINEAR; DOSIMETRY; GAMMA RAYS; TRANSISTORS, FIELD EFFECT; X-RAYS;

EID: 0024168776     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.25487     Document Type: Article
Times cited : (172)

References (43)
  • 18
    • 84939319742 scopus 로고    scopus 로고
    • Linear Response Analysis
    • this proceedings
    • F. B. McLean, “Linear Response Analysis,” this proceedings.
    • McLean, F.B.1
  • 32
    • 84939384384 scopus 로고    scopus 로고
    • The ionization chamber employed was manufactured by Nuclear Enterprises, Ltd., and calibrated (- ± 2 percent quoted uncertainty in calibration) with exposures to a hard, filtered x-ray source at the British National Physical Laboratory. Moreover, the chamber response varied by less than 5 percent with large changes in calibration spectrum, so we feel it is compare these results with the TLD results obtained in the Cs-137 source. A Keithley Model 35617 Programmable Dosimeter was used for the dose rate read-out. Leakage currents were more than two orders of magnitude below the ionization current at the lowest dose rates
    • The ionization chamber employed was manufactured by Nuclear Enterprises, Ltd., and calibrated (- ± 2 percent quoted uncertainty in calibration) with exposures to a hard, filtered x-ray source at the British National Physical Laboratory. Moreover, the chamber response varied by less than 5 percent with large changes in calibration spectrum, so we feel it is compare these results with the TLD results obtained in the Cs-137 source. A Keithley Model 35617 Programmable Dosimeter was used for the dose rate read-out. Leakage currents were more than two orders of magnitude below the ionization current at the lowest dose rates.
  • 34
    • 84939332361 scopus 로고    scopus 로고
    • Early Interface Trap Effects
    • this proceedings
    • H. E. Boesch, Jr., “Early Interface Trap Effects,” this proceedings.
    • Boesch, H.E.1
  • 35
    • 84939372444 scopus 로고    scopus 로고
    • Time Dependence of Interface State Formation
    • this proceedings
    • N. S. Saks, C. M. Dozier, and D. B. Brown, “Time Dependence of Interface State Formation,” this proceedings.
    • Saks, N.S.1    Dozier, C.M.2    Brown, D.B.3
  • 38
    • 84939334074 scopus 로고    scopus 로고
    • We thank Al Carlan and Ron Pease for focusing this point at the March 1988 meeting of the DNA Post-Irradiation Irradiation Effects Working Group, in Dallas, TX
    • We thank Al Carlan and Ron Pease for focusing this point at the March 1988 meeting of the DNA Post-Irradiation Irradiation Effects Working Group, in Dallas, TX.
  • 43
    • 84939346676 scopus 로고    scopus 로고
    • Total-Dose Hardness Assurance Issues for SOI MOSFETs
    • this proceedings
    • D. M. Fleetwood, S. S. Tsao, and P. S. Winokur, “Total-Dose Hardness Assurance Issues for SOI MOSFETs,” this proceedings.
    • Fleetwood, D.M.1    Tsao, S.S.2    Winokur, P.S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.