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6
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0021587257
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J. R. Schwank, P. S. Winokur, P. J. McWhorter, F. W. Sexton, P. V. Dressendorfer, and D. C. Turpin,IEEE Trans. Nuc. Sci. NS-31, 1434 (1984).
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(1984)
IEEE Trans. Nuc. Sci.
, vol.NS-31
, pp. 1434
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Schwank, J.R.1
Winokur, P.S.2
McWhorter, P.J.3
Sexton, F.W.4
Dressendorfer, P.V.5
Turpin, D.C.6
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8
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0344690219
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T. Stanley, D. Neamen, P. Dressendorfer, J. Schwank, P. Winokur, M. Ackermann, K. Jungling, C. Hawkins, and W. Grannemann, IEEE Trans. Nuc. Sci. NS-32, 3982 (1985).
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(1985)
IEEE Trans. Nuc. Sci.
, vol.NS-32
, pp. 3982
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Stanley, T.1
Neamen, D.2
Dressendorfer, P.3
Schwank, J.4
Winokur, P.5
Ackermann, M.6
Jungling, K.7
Hawkins, C.8
Grannemann, W.9
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9
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84911439162
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J. R. Schwank, P. S. Winokur, F. W. Sexton, D. M. Fleetwood, J. H. Perry, P. V. Dressendorfer, D. T. Sanders, and D. C. Turpin, IEEE Trans. Nuc. Sci. NS-33, 1178 (1986).
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(1986)
IEEE Trans. Nuc. Sci.
, vol.NS-33
, pp. 1178
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Schwank, J.R.1
Winokur, P.S.2
Sexton, F.W.3
Fleetwood, D.M.4
Perry, J.H.5
Dressendorfer, P.V.6
Sanders, D.T.7
Turpin, D.C.8
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11
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6044220553
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P. S. Winokur, F. W. Sexton, J. R. Schwank, D. M. Fleetwood, P. V. Dressendorfer, T. F. Wrobel, and D. C. Turpin, IEEE Trans. Nuc. Sci. NS-33, 1343 (1986).
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(1986)
IEEE Trans. Nuc. Sci.
, vol.NS-33
, pp. 1343
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Winokur, P.S.1
Sexton, F.W.2
Schwank, J.R.3
Fleetwood, D.M.4
Dressendorfer, P.V.5
Wrobel, T.F.6
Turpin, D.C.7
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12
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0007375977
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J. R. Schwank, D. M. Fleetwood, P. S. Winokur, P. V. Dressendorfer, D. C. Turpin, and D. T. Sanders, IEEE Trans. Nuc. Sci. NS-33, 1152 (1987).
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(1987)
IEEE Trans. Nuc. Sci.
, vol.NS-33
, pp. 1152
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Schwank, J.R.1
Fleetwood, D.M.2
Winokur, P.S.3
Dressendorfer, P.V.4
Turpin, D.C.5
Sanders, D.T.6
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14
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27744449846
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T. R. Oldham, A. J. Lelis, H. E. Boesch, Jr., J. M. Benedetto, F. B. McLean, J. M. McGarrity, IEEE Trans. Nuc. Sci. NS-311, 1184 (1987).
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(1987)
IEEE Trans. Nuc. Sci.
, vol.NS-311
, pp. 1184
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Oldham, T.R.1
Lelis, A.J.2
Boesch, H.E.3
Benedetto, J.M.4
McLean, F.B.5
McGarrity, J.M.6
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15
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3743153188
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P. S. Winokur, F. W. Sexton, G. L. Hash, and D. C. Turpin, IEEE Trans. Nuc. Sci. NS-34, 1448 (1987).
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(1987)
IEEE Trans. Nuc. Sci.
, vol.NS-34
, pp. 1448
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Winokur, P.S.1
Sexton, F.W.2
Hash, G.L.3
Turpin, D.C.4
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18
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84939319742
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Linear Response Analysis
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this proceedings
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F. B. McLean, “Linear Response Analysis,” this proceedings.
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McLean, F.B.1
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20
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77957022392
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C. M. Dozier, D. M. Fleetwood, D. B. Brown, and P. S. Winokur, IEEE Trans. Nuc. Sci. NS-34, 1535 (1987).
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(1987)
IEEE Trans. Nuc. Sci.
, vol.NS-34
, pp. 1535
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Dozier, C.M.1
Fleetwood, D.M.2
Brown, D.B.3
Winokur, P.S.4
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21
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0001649726
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D. M. Fleetwood, P. S. Winokur, C. M. Dozier, and D. B. Brown, Appl. Phys. Lett. 52, 1514 (1988).
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(1988)
Appl. Phys. Lett.
, vol.52
, pp. 1514
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Fleetwood, D.M.1
Winokur, P.S.2
Dozier, C.M.3
Brown, D.B.4
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23
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0021605304
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P. J. McWhorter and P. S. Winokur, Appl. Phys. Lett. 48, 133 (1986)
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P. S. Winokur, J. R. Schwank, P. J. McWhorter, P. V. Dressendorfer, ‘and D. C. Turpin, IEEE Trans. Nuc. Sci. NS-31, 1453 (1984); P. J. McWhorter and P. S. Winokur, Appl. Phys. Lett. 48, 133 (1986).
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(1984)
IEEE Trans. Nuc. Sci.
, vol.NS-31
, pp. 1453
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Winokur, P.S.1
Schwank, J.R.2
McWhorter, P.J.3
Dressendorfer, P.V.4
Turpin, D.C.5
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24
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84939061160
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H. J. Tausch, R. Wemhoner, R. L. Pease, J. R. Schwank, and R. J. Maier, IEEE Trans. Nuc. Sci. NS-34, 1763 (1987).
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(1987)
IEEE Trans. Nuc. Sci.
, vol.NS-34
, pp. 1763
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Tausch, H.J.1
Wemhoner, R.2
Pease, R.L.3
Schwank, J.R.4
Maier, R.J.5
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25
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84881147810
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D. M. Fleetwood, P. S. Winokur, R. W. Beegle, P. V. Dressendorfer, and B. L. Draper, IEEE Trans. Nuc. Sci. NS-32, 4369 (1985).
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(1985)
IEEE Trans. Nuc. Sci.
, vol.NS-32
, pp. 4369
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Fleetwood, D.M.1
Winokur, P.S.2
Beegle, R.W.3
Dressendorfer, P.V.4
Draper, B.L.5
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26
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0020913639
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J. G. Kelly, T. F. Luera, L. D. Posey, D. W. Vehar, D. B. Brown, and C. M. Dozier, IEEE Trans. Nuc. Sci. NS-30, 4388 (1983).
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(1983)
IEEE Trans. Nuc. Sci.
, vol.NS-30
, pp. 4388
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Kelly, J.G.1
Luera, T.F.2
Posey, L.D.3
Vehar, D.W.4
Brown, D.B.5
Dozier, C.M.6
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28
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84939369913
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Comparison of Enhanced Device Response and Predicted X-Ray Dose Enhancement Effects on MOS Oxides
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this issue
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D. M. Fleetwood, D. E. Beutler, L. J. Lorence, Jr., D. B. Brown, B. L. Draper, L. C. Riewe, D. P. Knott, and H. B. Rosenstock, “Comparison of Enhanced Device Response and Predicted X-Ray Dose Enhancement Effects on MOS Oxides,” this issue.
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Fleetwood, D.M.1
Beutler, D.E.2
Lorence, L.J.3
Brown, D.B.4
Draper, B.L.5
Riewe, L.C.6
Knott, D.P.7
Rosenstock, H.B.8
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32
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84939384384
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The ionization chamber employed was manufactured by Nuclear Enterprises, Ltd., and calibrated (- ± 2 percent quoted uncertainty in calibration) with exposures to a hard, filtered x-ray source at the British National Physical Laboratory. Moreover, the chamber response varied by less than 5 percent with large changes in calibration spectrum, so we feel it is compare these results with the TLD results obtained in the Cs-137 source. A Keithley Model 35617 Programmable Dosimeter was used for the dose rate read-out. Leakage currents were more than two orders of magnitude below the ionization current at the lowest dose rates
-
The ionization chamber employed was manufactured by Nuclear Enterprises, Ltd., and calibrated (- ± 2 percent quoted uncertainty in calibration) with exposures to a hard, filtered x-ray source at the British National Physical Laboratory. Moreover, the chamber response varied by less than 5 percent with large changes in calibration spectrum, so we feel it is compare these results with the TLD results obtained in the Cs-137 source. A Keithley Model 35617 Programmable Dosimeter was used for the dose rate read-out. Leakage currents were more than two orders of magnitude below the ionization current at the lowest dose rates.
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33
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0018468948
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P. S. Winokur, H. E. Boesch, Jr., J. M. McGarrity, and F. B. McLean, J. Appl. Phys. 50, 3492 (1978).
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(1978)
J. Appl. Phys.
, vol.50
, pp. 3492
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Winokur, P.S.1
Boesch, H.E.2
McGarrity, J.M.3
McLean, F.B.4
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34
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84939332361
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Early Interface Trap Effects
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this proceedings
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H. E. Boesch, Jr., “Early Interface Trap Effects,” this proceedings.
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Boesch, H.E.1
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35
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84939372444
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Time Dependence of Interface State Formation
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this proceedings
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N. S. Saks, C. M. Dozier, and D. B. Brown, “Time Dependence of Interface State Formation,” this proceedings.
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Saks, N.S.1
Dozier, C.M.2
Brown, D.B.3
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36
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0022895666
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See, for example
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See, for example, H. E. Boesch, Jr., P. B. McLean, J. M. Benedetto, J. M. McGarrity, and W. E. Bailey, IEEE Trans. Nuc. Sci. NS-33, 1191 (1986).
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(1986)
IEEE Trans. Nuc. Sci.
, vol.NS-33
, pp. 1191
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Boesch, H.E.1
McLean, P.B.2
Benedetto, J.M.3
McGarrity, J.M.4
Bailey, W.E.5
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37
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0017741211
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See, for example
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See, for example, P. S. Winokur, H. E. Boesch, Jr., J. M. McGarrity, and F. B. McLean, IEEE Trans. Nuc. Sci. NS-24, 2113 (1977).
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(1977)
IEEE Trans. Nuc. Sci.
, vol.NS-24
, pp. 2113
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Winokur, P.S.1
Boesch, H.E.2
McGarrity, J.M.3
McLean, F.B.4
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38
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84939334074
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We thank Al Carlan and Ron Pease for focusing this point at the March 1988 meeting of the DNA Post-Irradiation Irradiation Effects Working Group, in Dallas, TX
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We thank Al Carlan and Ron Pease for focusing this point at the March 1988 meeting of the DNA Post-Irradiation Irradiation Effects Working Group, in Dallas, TX.
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40
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27744449846
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T. R. Oldham, A. J. Lelis, H. E. Boesch, Jr., J. M. Benedetto, F. B. McLean, and J. M. McGarrity, IEEE Trans. Nuc. Sci. NS-34, 1184 (1987).
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(1987)
IEEE Trans. Nuc. Sci.
, vol.NS-34
, pp. 1184
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Oldham, T.R.1
Lelis, A.J.2
Boesch, H.E.3
Benedetto, J.M.4
McLean, F.B.5
McGarrity, J.M.6
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41
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0024092433
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High-Temperature Silicon-on-Insulator Electronics for a Space Nuclear Power System
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October
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D. M. Fleetwood, F. V. Thome, S. S. Tsao, P. V. Dressendorfer, V. J. Dandini, and J. R. Schwank, “High-Temperature Silicon-on-Insulator Electronics for a Space Nuclear Power System,” October 1988 issue of IEEE Trans. Nuc. Sci. NS-35, No. 5.
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(1988)
issue of IEEE Trans. Nuc. Sci.
, vol.NS-35
, Issue.5
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Fleetwood, D.M.1
Thome, F.V.2
Tsao, S.S.3
Dressendorfer, P.V.4
Dandini, V.J.5
Schwank, J.R.6
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42
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84939019265
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D. M. Fleetwood, R. W. Beegle, F. W. Sexton, P. S. Winokur, S. L. Miller, R. K. Treece, J. R. Schwank, R. V. Jones, and P. J. McWhorter, IEEE Trans. Nuc. Sci. NS-33, 1330 (1986).
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(1986)
IEEE Trans. Nuc. Sci.
, vol.NS-33
, pp. 1330
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Fleetwood, D.M.1
Beegle, R.W.2
Sexton, F.W.3
Winokur, P.S.4
Miller, S.L.5
Treece, R.K.6
Schwank, J.R.7
Jones, R.V.8
McWhorter, P.J.9
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43
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84939346676
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Total-Dose Hardness Assurance Issues for SOI MOSFETs
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this proceedings
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D. M. Fleetwood, S. S. Tsao, and P. S. Winokur, “Total-Dose Hardness Assurance Issues for SOI MOSFETs,” this proceedings.
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Fleetwood, D.M.1
Tsao, S.S.2
Winokur, P.S.3
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