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Volumn 81, Issue 10, 1997, Pages 6822-6824

A model of hole trapping in SiO2 films on silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000583521     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365438     Document Type: Article
Times cited : (38)

References (15)
  • 3
    • 0012271154 scopus 로고    scopus 로고
    • edited by H. Z. Massoud, E. H. Poindexter, and C. J. Helms, Proc. Vol. 96-1 The Electrochemical Society, Pennington, NJ
    • 2 Interface, edited by H. Z. Massoud, E. H. Poindexter, and C. J. Helms, Proc. Vol. 96-1 (The Electrochemical Society, Pennington, NJ, 1996), Vol. 3, pp. 214-249.
    • (1996) 2 Interface , vol.3 , pp. 214-249
    • Conley, J.F.1    Lenahan, P.M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.