Preliminary investigation of the kinetics of postoxidation rapid thermal anneal induced hole-trap-precursor formation in microelectronic SiO2 films

Applied Physics Letters

Volumn 73, Issue 15, 1998, Pages 2188-2190

  Conley Jr , J F ^a   Lenahan, P M ^b   McArthur, W F ^a  

^a DYNAMICS RESEARCH CORPORATION   (United States)

^b The Pennsylvania State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000513281     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122418     Document Type: Article

References (30)

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