Field Dependence of Interface-Trap Buildup in Polysilicon and Metal Gate MOS Devices

IEEE Transactions on Nuclear Science

Volumn 37, Issue 6, 1990, Pages 1632-1640

  Shaneyfelt, M R ^a   Schwank, J R ^a   Fleetwood, D M ^a   Winokur, P S ^a   Hughes, K L ^a,b   Sexton, F W ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b L M Technologies   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; HYDROGEN; IONS; SEMICONDUCTING SILICON; TRANSISTORS--SEMICONDUCTOR INSULATOR BOUNDARIES;

ELECTRON-HOLE RECOMBINATION; POLYSILICON;

SEMICONDUCTOR DEVICES, MOS;

EID: 0025660053     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.101171     Document Type: Article

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