Si-SiO2 interface state generation during X-ray irradiation and during post-irradiation exposure to a hydrogen ambient

IEEE Transactions on Nuclear Science

Volumn 38, Issue 6, 1991, Pages 1101-1110

  Mrstik, B J ^a   Rendell, R W ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN; SEMICONDUCTOR DEVICES--SEMICONDUCTOR INSULATOR BOUNDARIES; X-RAYS;

RADIATION-INDUCED DEFECTS;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026372364     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.124081     Document Type: Article

References (37)

1. 2Interface”, IEEE Trans. Nucl. Sci. NS-27, 1640 (1980).
2. S.K. Lai, “Interface Trap Generation in Silicon Dioxide When Electrons are Captured by Trapped Holes”, J. Appl. Phys. 54, 2540 (1983).
3. S.J. Lang, J.M. Sung and S.A. Lyon, “Relationship Between Hole Trapping and Interface State Generation in Metal-Oxide-Silicon Silicon Structures”, Appl. Phys. Lett. 52, 1431 (1988).
4. 2 Structures”, Appl. Phys. Lett. 55, 2328 (1989).
5. 2 -on-Si Structures”, J. Appl. Phys. 58, 2524 (1985).
6. 2 MOS Structures”, IEEE Trans. Nucl. Sci. NS-27, 1651 (1980).
7. + Process”, IEEE Trans. Nucl. Sci. NS-36, 1848 (1989).
8. R.A. Kohler, R.A. Kushner, and K.H. Lee, “Total Dose Radiation Hardness of MOS Devices in Hermetic Ceramic Packages”, IEEE Trans. Nucl. Sci. NS-35, 1492 (1988).
9. 2 Interface States in a Hydrogen Atmosphere at Room Temperature”, J. Elect. Mat. 20, 627 (1991).
10. R.E. Stahlbush, B.J. Mrstik, and R.K. Lawrence, “Post-Irradiation Behavior of the Interface State Density and the Trapped Positive Charge”, IEEE Trans. Nucl. Sci. NS-37, 1641 (1990).
11. G. Groeseneken, H.E. Maes, N. Beltran, and R.F. DeKeersmaecker, “A Reliable Approach to Charge-Pumping Measurements in MOS Transistors”, IEEE Trans. Elec. Dev. ED-31, 42 (1984).
12. J. Crank, The Mathematics of Diffusion (Clarendon, Oxford, 1975), p. 305.
13. J.E. Shelby, “Reaction of Hydrogen with Hydroxyl-Free Vitreous Silica”, J. Appl. Phys. 51, 2589 (1980).
14. R.W. Lee, R.C. Frank, and D.E. Swets, “Diffusion of Hydrogen and Deuterium in Fused Quartz”, J. Chem. Phys. 36, 1062 (1962).
15. B.J. Fishbein, J.T. Watt, and J.D. Plummer, Time Resolved Annealing of Interface Traps in Poly-Silicon Gate Metal-Oxide-Silicon Silicon Capacitors”, J. Electrochem. Soc. 134, 674 (1987).
16. 3”, J. Non-cryst. Solids 14, 288 (1974).
17. B.J. Mrstik, P.J. McMarr, J.R. Blanco, and J.M. Bennett, “Measurement of the Thickness and Optical Properties of Thermal Oxides of Si Using Spectroscopic Ellipsometry and Stylus Profilometry”, J. Electrochem. Soc. 138, 1770 (1991).
18. P.M. Lenahan and P.V. Dressendorfer, “Hole Traps and Trivalent Silicon Centers in Metal/Oxide/Silicon Devices”, J. Appl. Phys. 55, 3495 (1984).
19. J.J. Tzou, J.Y-S. Sun, and C.-T. Sah, “Field Dependence of Two Large Hole Trap Capture Cross Sections in Thermal Oxide on Silicon”, Appl. Phys. Lett. 43, 861 (1983).
20. M.R. Shaneyfelt, J.R. Schwank, D.M. Fleetwood, P.S. Winokur, K.L. Hughes, and F.W. Sexton, “Field Dependence of Interface-Trap Formation and Metal Gate MOS Devices”, IEEE Trans. Nucl. Sci. NS-37, 1632 (1990).
21. 2 and Its Interfaces, edited by C.R. Helms and B.E. Deal (Plenum Press, New York, 1988) p. 287.
22. K.L. Brower, P.M. Lenahan, and P.V. Dressendorfer, “Defects and Impurities in Thermal Oxides on Silicon”, Appl. Phys. Lett. 41, 251 (1982).
23. D.L. Griscom, “Self-Trapped Holes in Amorphous Silicon Dioxide”, Phys. Rev. B40, 4224 (1989).
24. H.E. Boesch and J.M. McGarrity, “Charge Yield and Dose Effects in MOS Capacitors at 80 K”, IEEE Trans. Nucl. Sci. NS-23, 1520 (1976).
25. N.S. Saks, R.B. Klein, and D.L. Griscom, “Formation of Interface Traps in MOSFETs During Annealing and Following Low Temperature Irradiation”, IEEE Trans. Nucl. Sci. NS-35, 1234 (1988).
26. 2 and Its Interfaces, edited by S.T. Pantelides (Pergamon Press, Elmsford, NY, 1978), p. 328.
27. 2, edited by R.A.B. Devine (Plenum Press, New York, 1989), p. 91.
28. 2”, J. Chem. Phys. 75, 669 (1981).
29. R. Gale, F.J. Feigl, C.W. Magee and D.R. Young, “Hydrogen Migration under Avalanche Injection of Electrons in Si-Metal-Oxide-Semiconductor Metal-Oxide-Semiconductor Capacitors”, J. Appl. Phys. 54, 6938 (1983).
30. K.H. Beckman and N.J. Harrick, “Hydrides and Hydroxyls in Thin Silicon Dioxide Films”, J. Electrochem. Soc. 118, 614 (1971).
31. A. Hartstein and D.R. Young, “Identification of Electron Traps in Thermal Silicon Dioxide Films”, Appl. Phys. Lett. 38, 631 (1981).
32. J.T. Krick, J. Gabrys, D.L. Semon, and P.M. Lenahan, “A Search for Protons in Irradiated MOS Devices”, Insulating Films on Silicon 1991 Conference, Liverpool, England, Apr. 1991.
33. C.T. Sah, “Origin of Interface States and Oxide Charges Generated by Ionizing Radiation”, IEEE Trans. Nucl. Sci. NS-23, 1563 (1976).
34. 3”, J. Electrochem. Soc. 133, 2549 (1986).
35. 2 Interface Trap Annealing”, J. Appl. Phys. 63, 5776 (1988).
36. R.E. Stahlbush, R.K. Lawrence, H.L. Hughes, and N.S. Saks, “Annealing of Total Dose Damage: Redistribution of Interface State Density on <100>, <110> and <111> Orientation Silicon”, IEEE Trans. Nucl. Sci. NS-35, 1192 (1988).
37. 2 Interface”, Phys. Rev. B38, 9657 (1988).