-
1
-
-
0038428099
-
Effects of HC1 Gettering, Cr Doping, and Al Implantation on Hardened SiO2
-
K.G. Aubuchon, E. Harari, D.H. Leong. and C.P. Chang, “Effects of HC1 Gettering, Cr Doping, and Al Implantation on Hardened SiO2,” IEEE Trans. NS 21, 167 (1974).
-
(1974)
IEEE Trans
, vol.NS 21
, pp. 167
-
-
Aubuchon, K.G.1
Harari, E.2
Leong, D.H.3
Chang, C.P.4
-
2
-
-
0038428103
-
Radiation Hardened CMOS/SOS
-
K.G. Aubuchon, and E. Harari, “Radiation Hardened CMOS/SOS,” IEEE Trans. NS 22, 2181 (1975).
-
(1975)
IEEE Trans
, vol.NS 22
, pp. 2181
-
-
Aubuchon, K.G.1
Harari, E.2
-
3
-
-
0001399549
-
Process Optimization of Radiation Hardened Integrated Circuits
-
G.F. Derbenwick, and B.L. Gregory, “Process Optimization of Radiation Hardened Integrated Circuits,” IEEE Trans. NS 22, 2151, (1975).
-
(1975)
IEEE Trans
, vol.NS 22
, pp. 2151
-
-
Derbenwick, G.F.1
Gregory, B.L.2
-
4
-
-
0017217554
-
Dependence of Interface-State Buildup on Hole Generation and Transport in Irradiated MOS Capacitors
-
P.S. Winokur, J.M. McGarrity, and H.E. Boesh, “Dependence of Interface-State Buildup on Hole Generation and Transport in Irradiated MOS Capacitors,” IEEE Trans, NS 23, 1580 (1976).
-
(1976)
IEEE Trans
, vol.NS 23
, pp. 1580
-
-
Winokur, P.S.1
McGarrity, J.M.2
Boesh, H.E.3
-
5
-
-
0017741211
-
Field- and Time-Dependent Radiation Effects at the Si/SiO2 Interface of Hardened MOS Capacitors
-
P.S. Winokur, H.E. Boesch, J.M. McGarrity, and F.B. McLean, “Field- and Time-Dependent Radiation Effects at the Si/SiO2 Interface of Hardened MOS Capacitors,” IEEE Trans. NS 24, 2113 (1977).
-
(1977)
IEEE Trans
, vol.NS 24
, pp. 2113
-
-
Winokur, P.S.1
Boesch, H.E.2
McGarrity, J.M.3
McLean, F.B.4
-
6
-
-
0019279479
-
Interface-State Generation Radiation-Hard Oxides
-
P.S. Winokur and H.E. Boesch, Jr., “Interface-State Generation Radiation-Hard Oxides,” IEEE Trans. NS 27., 1647 (1980).
-
(1980)
IEEE Trans
, vol.NS 27
, pp. 1647
-
-
Winokur, P.S.1
Boesch, H.E.2
-
7
-
-
0018457253
-
1 μm MOSFET VLSI Technology: Part IV - Hot-Electron Design Constraints
-
T.H. Ning, P.W. Cook, R.H. Dennard, C.M. Osburn, S.E. Schuster, and H.N. Yu, “1 μm MOSFET VLSI Technology: Part IV - Hot-Electron Design Constraints,” IEEE Trans.ED 26 346 (1979).
-
(1979)
IEEE Trans
, vol.ED 26
, pp. 346
-
-
Ning, T.H.1
Cook, P.W.2
Dennard, R.H.3
Osburn, C.M.4
Schuster, S.E.5
Yu, H.N.6
-
8
-
-
0024934649
-
Interface Trap Formation Via the Two Stage H+ Process
-
N.S. Saks and D.B. Brown, “Interface Trap Formation Via the Two Stage H+ Process,” IEEE Trans. NS 36, 1848 (1989).
-
(1848)
IEEE Trans
, vol.NS 36
-
-
Saks, N.S.1
Brown, D.B.2
-
9
-
-
0008987187
-
Comparison of Interface-State Buildup in MOS Capacitors Subjected to Penetrating and Non-Penetrating Radiation
-
P.S. Winokur and M.M. Sokoloski, “Comparison of Interface-State Buildup in MOS Capacitors Subjected to Penetrating and Non-Penetrating Radiation,” Appl. Phys. Lett. 28. 627 (1976).
-
(1976)
Appl. Phys. Lett
, vol.28
, pp. 627
-
-
Winokur, P.S.1
Sokoloski, M.M.2
-
10
-
-
0019242095
-
A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures
-
F.B. McLean, “A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures,” IEEE Trans. NS 27 1651 (1980).
-
(1980)
IEEE Trans
, vol.NS 27
, pp. 1651
-
-
McLean, F.B.1
-
11
-
-
0025590783
-
Observation of H+ Motion During Interface Trap Formation
-
N.S. Saks and D.B. Brown, “Observation of H+ Motion During Interface Trap Formation,” IEEE Trans. NS 37, 1624 (1990).
-
(1990)
IEEE Trans
, vol.NS 37
, pp. 1624
-
-
Saks, N.S.1
Brown, D.B.2
-
12
-
-
0024176412
-
Time Dependence of Interface Trap Formation in MOSFETs Following Pulsed Irradiation
-
N.S. Saks, C.M. Dozier, and D.B. Brown, “Time Dependence of Interface Trap Formation in MOSFETs Following Pulsed Irradiation,” IEEE Trans NS 35, 1168 (1988).
-
(1988)
IEEE Trans
, vol.NS 35
, pp. 1168
-
-
Saks, N.S.1
Dozier, C.M.2
Brown, D.B.3
-
13
-
-
0024169724
-
Total Dose Radiation Hardness of MOS Devices in Hermetic Packages
-
R.A. Kohler, R.A. Kushner, and K.H. Lee, “Total Dose Radiation Hardness of MOS Devices in Hermetic Packages,” IEEE Trans. NS 35. 1492 (1988).
-
(1988)
IEEE Trans
, vol.NS 35
, pp. 1492
-
-
Kohler, R.A.1
Kushner, R.A.2
Lee, K.H.3
-
14
-
-
0025682742
-
Post-Irradiation Behavior of the Interface State Density and the Trapped Positive Charge
-
R.E. Stahlbush, B.J. Mrstik, and R.K. Lawrence, “Post-Irradiation Behavior of the Interface State Density and the Trapped Positive Charge,” IEEE Trans. NS 37, 1641 (1990).
-
(1990)
IEEE Trans
, vol.NS 37
, pp. 1641
-
-
Stahlbush, R.E.1
Mrstik, B.J.2
Lawrence, R.K.3
-
15
-
-
0026372364
-
Si/SiO2 Interface State Generation During X-ray Irradiation and During Post-Irradiation Exposure to Hydrogen Ambient
-
B.J. Mrstik and R.W. Rendell, “Si/SiO2 Interface State Generation During X-ray Irradiation and During Post-Irradiation Exposure to Hydrogen Ambient,” IEEE Trans. NS 38. 1101 (1991).
-
(1991)
IEEE Trans
, vol.NS 38
, pp. 1101
-
-
Mrstik, B.J.1
Rendell, R.W.2
-
16
-
-
0021427238
-
Hole Traps and Trivalent Silicon Centers in Metal/Oxide/Silicon Devices
-
P.M. Lenahan and P.K. Dressendorfer, “Hole Traps and Trivalent Silicon Centers in Metal/Oxide/Silicon Devices,” J. Appl. Phys. 55, 3495 (1984).
-
(1984)
J. Appl. Phys
, vol.55
, pp. 3495
-
-
Lenahan, P.M.1
Dressendorfer, P.K.2
-
17
-
-
0001466860
-
Direct Observation of Interfacial Point Defects Generated by Channel Hot Hole Injection in n-Channel Metal Oxide Silicon Field Effect Transistors
-
J. T. Krick, P.M. Lenahan, and G.J. Dunn, “Direct Observation of Interfacial Point Defects Generated by Channel Hot Hole Injection in n-Channel Metal Oxide Silicon Field Effect Transistors”, Appl. Phys. Lett 59, 3437 (1991).
-
(1991)
Appl. Phys Lett
, vol.59
, pp. 3437
-
-
Krick, J.T.1
Lenahan, P.M.2
Dunn, G.J.3
-
18
-
-
0000039350
-
Electron Spin Resonance in Neutron-Irradiated Quartz
-
R.H. Silsbee, “Electron Spin Resonance in Neutron-Irradiated Quartz,” J. Appl. Phys. 32, 1459 (1961).
-
(1961)
J. Appl.Phys
, vol.32
, pp. 1459
-
-
Silsbee, R.H.1
-
19
-
-
0346840948
-
Diffusion of Radiolytic Molecular Hydrogen as a Mechanism for the Post-Irradiation Buildup of Interface States in SiO2-on-Si Structures
-
D.L. Griscom, “Diffusion of Radiolytic Molecular Hydrogen as a Mechanism for the Post-Irradiation Buildup of Interface States in SiO2-on-Si Structures,” J. Appl. Phys. 58, 2524 (1985).
-
(1985)
J. Appl.Phys
, vol.58
, pp. 2524
-
-
Griscom, D.L.1
-
20
-
-
0025660053
-
Field Dependence of Interface-Trap Buildup in Polysilicon and Metal Gate MOS Devices
-
M.R. Shaneyfelt, J.R. Schwank D.M. Fleetwood, P.S. Winokur, K.L. Hughes, and F.W. Sexton, “Field Dependence of Interface-Trap Buildup in Polysilicon and Metal Gate MOS Devices,” IEEE Trans. NS 37, 1632 (1990).
-
(1990)
IEEE Trans
, vol.NS 37
, pp. 1632
-
-
Shaneyfelt, M.R.1
Schwank, J.R.2
Fleetwood, D.M.3
Winokur, P.S.4
Hughes, K.L.5
Sexton, F.W.6
-
21
-
-
0001038451
-
Electron Spin Resonance Observation of Defects in Device Oxides Damaged by Soft X Rays
-
B.B. Triplett, T. Takahashi, and T. Sugano, “Electron Spin Resonance Observation of Defects in Device Oxides Damaged by Soft X Rays,” Appl. Phys. Lett. 50, 1663 (1987).
-
(1987)
Appl. Phys. Lett
, vol.50
, pp. 1663
-
-
Triplett, B.B.1
Takahashi, T.2
Sugano, T.3
-
22
-
-
51149208555
-
Electron Spin Resonance Observation of the Creation. Annihilation, and Charge State of the 74-Gauss Doublet in Device Oxides Damage by Soft X-Rays
-
T. Takahashi, B.B. Triplett, K. Yokogawa, and T. Sugano, “Electron Spin Resonance Observation of the Creation. Annihilation, and Charge State of the 74-Gauss Doublet in Device Oxides Damage by Soft X-Rays”, Appl. Phys.Lett. 51. 1344 (1987).
-
(1987)
Appl. Phys.Lett
, vol.51
, pp. 1344
-
-
Takahashi, T.1
Triplett, B.B.2
Yokogawa, K.3
Sugano, T.4
-
23
-
-
0018040113
-
ESR Studies of Hydrogen Hyperfine Spectra in Irradiated Vitreous Silica
-
John Vitko, “ESR Studies of Hydrogen Hyperfine Spectra in Irradiated Vitreous Silica,” J. Appl. Phys. 49, 5530 (1978).
-
(1978)
J. Appl. Phys
, vol.49
, pp. 5530
-
-
Vitko, J.1
-
24
-
-
0023344710
-
On the Structures of Hydrogen-Associated Defect Centers in Irradiated High-Purity a-SiO2-OH
-
T.E. Tsai and D.L. Griscom, “On the Structures of Hydrogen-Associated Defect Centers in Irradiated High-Purity a-SiO2-OH,” OH,” J. Non. Cryst. Sol. 91. 170 (1987).
-
(1987)
J. Non. Cryst. Sol
, vol.91
, pp. 170
-
-
Tsai, T.E.1
Griscom, D.L.2
-
25
-
-
84939740906
-
Evidence for a Deep Electron Trap and Charge Compensation in Separation by Implanted Oxygen Oxides
-
this issue
-
J.F. Conley, P.M. Lenahan, and P. Roitman, “Evidence for a Deep Electron Trap and Charge Compensation in Separation by Implanted Oxygen Oxides,” this issue.
-
-
-
Conley, J.F.1
Lenahan, P.M.2
Roitman, P.3
-
26
-
-
84939319993
-
Electron Spin Resonance Study of Trapping Centers in SIMOX Buried Oxides
-
W. Eccleston, editor, Institute of Physics, Adam Hilger, Bristol England
-
J.F. Conley, P.M. Lenahan., and P. Roitman, “Electron Spin Resonance Study of Trapping Centers in SIMOX Buried Oxides,” Proceedings of the 1991 Insulating Films on Semiconductors Conference, W. Eccleston, editor, Institute of Physics, Adam Hilger, Bristol England, (1991) p. 259.
-
(1991)
Proceedings of the 1991 Insulating Films on Semiconductors Conference
, pp. 259
-
-
Conley, J.F.1
Lenahan, P.M.2
Roitman, P.3
-
27
-
-
0026400390
-
Electron Spin Resonance Study of E' Trapping Centers in SIMOX Buried Oxides
-
J.F. Conley, P.M. Lenahan, and P. Roitman, “Electron Spin Resonance Study of E' Trapping Centers in SIMOX Buried Oxides,” IEEE Trans. NS 38. 1247 (1991).
-
(1991)
IEEE Trans
, vol.NS 38
, pp. 1247
-
-
Conley, J.F.1
Lenahan, P.M.2
Roitman, P.3
-
28
-
-
0001364944
-
Relationship Between Hole Trapping and Interface State Generation in Metal-Oxide-Silicon Structures
-
S.J. Wang, J.M. Sung, and S.A. Lyon, “Relationship Between Hole Trapping and Interface State Generation in Metal-Oxide-Silicon Structures,” Appl. Phys. Lett 52, 1431 (1988).
-
(1988)
Appl. Phys Lett
, vol.52
, pp. 1431
-
-
Wang, S.J.1
Sung, J.M.2
Lyon, S.A.3
-
29
-
-
0020718654
-
Relationship Between X-Ray-Produced Holes and Interface States in Metal-Oxide-Semiconductor Capacitors
-
G.J. Hu and W.C. Johnson, “Relationship Between X-Ray-Produced Holes and Interface States in Metal-Oxide-Semiconductor Capacitors,” J. Appl. Phys. 54, 1441 (1983).
-
(1983)
J. Appl. Phys
, vol.54
, pp. 1441
-
-
Hu, G.J.1
Johnson, W.C.2
-
30
-
-
84939714147
-
Effects of Introducing H2 Into Irradiated MOSFET's from Room Temperature to 250°C
-
to be published in The Physics and Chemistry of SiO2 and the Si/SiO2 Interface, edited by C.R. Helms and B.E. Deal, Plenum Press
-
R.E. Stahlbush and A.E. Edwards, “Effects of Introducing H2 Into Irradiated MOSFET's from Room Temperature to 250°C”, to be published in The Physics and Chemistry of SiO2 and the Si/SiO2 Interface, edited by C.R. Helms and B.E. Deal, Plenum Press (1992).
-
(1992)
-
-
Stahlbush, R.E.1
Edwards, A.E.2
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