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Volumn 39, Issue 6, 1992, Pages 2186-2191

Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO2 thin films on silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001310775     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.211420     Document Type: Article
Times cited : (39)

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    • Effects of Introducing H2 Into Irradiated MOSFET's from Room Temperature to 250°C
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.