Interface-State Generation in Radiation-Hard Oxides

IEEE Transactions on Nuclear Science

Volumn 27, Issue 6, 1980, Pages 1647-1650

  Winokur, P S ^a   Boesch, H E ^a  

^a US Army Research Development and Engineering Command   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; NEUTRONS; RADIATION EFFECTS;

SEMICONDUCTOR DEVICES, MOS;

EID: 0019279479     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1980.4331083     Document Type: Article

References (11)

1. P. S. Winokur, H. E. Boesch, Jr., J. M. McGarrity, and F. B. McLean, IEEE Trans. Nucl. Sci. NS-24, 2113 (1977).
2. P. S. Winokur, H. E. Boesch, Jr., J. M. McGarrity, and F. B. McLean, J. Appl. Phys. 50, 3492 (1979).
3. J. R. Srour, S. C. Chen, S. Othmer, and R. A. Hartmann, IEEE Trans. Nucl. Sci. NS-26, 4784 (1979).
4. A “hardened” oxide is one that has received special processing to achieve tolerance to radiation in the Megarad range. This is generally accomplished either by minimizing the effects of hole trapping and interface states or by compensating the effects of hole trapping with interface states.
5. C. C. Chang and W. C. Johnson, IEEE Trans. Elec. Dev. ED-24, 1249 (1977).
6. F. B. McLean, H. E. Boesch, Jr., and J. M. McGarrity, Proc. of Intl. Conf. on Phys. of SiO 2 and Its Interfaces (Pergamon, New York, 1978), p. 19.
7. C. S. Jenq, Ph.D. Dissertation, Princeton University, (1977).
8. A. G. Revesz, IEEE Trans. Nucl. Sci. NS-24, 2102 (1977).
9. C. T. Sah, IEEE Trans. Nucl. Sci. NS-23, 1563 (1976).
10. K. O. Jeppson and C. M. Svensson, J. Appl. Phys. 48, 2004 (1977).
11. C. M. Svensson, Proc. of Intl. Conf. on Phys. of SiO 2 and Its Interfaces (Pergamon, New York, 1978), p. 328.