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Volumn 76, Issue 5, 1994, Pages 2872-2880

Observation and electronic characterization of "new" E′ center defects in technologically relevant thermal SiO2 on Si: An additional complexity in oxide charge trapping

(5) Conley Jr , John F a Lenahan, P M a Evans, H L b Lowry, R K b Morthorst, T J c

a PENNSYLVANIA STATE UNIVERSITY (United States)

b INTERSIL CORPORATION (United States)

c NONE (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36449001399 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.358428 Document Type: Article

Times cited : (93)

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