Radiation-induced interface states of poly-si gate mos capacitors using low temperature gate oxidation

IEEE Transactions on Nuclear Science

Volumn 30, Issue 6, 1983, Pages 4054-4058

  Naruke, K ^a   Yoshida, M ^a   Maeguchi, K ^a   Tango, H ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GAMMA RAYS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES, MOS - RADIATION EFFECTS;

CAPACITORS;

EID: 0020900953     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1983.4333080     Document Type: Article

References (15)

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