Radiation effects introduced by x-ray lithography in MOS devices

IEEE Transactions on Nuclear Science

Volumn 29, Issue 6, 1982, Pages 1697-1701

  Peckerar, M C ^a   Dozier, C M ^a   Brown, D B ^a   Patterson, D ^a   McCarthy, D ^a   Ma, D ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b SFA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; LITHOGRAPHY; TRANSISTORS; X-RAYS;

SEMICONDUCTOR DEVICES, MOS;

EID: 0020304261     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1982.4336431     Document Type: Article

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