Chapter 7 Neutralization of Donor Dopants and Formation of Hydrogen-Induced Defects in n-Type Silicon

Semiconductors and Semimetals

Volumn 34, Issue C, 1991, Pages 113-137

  Johnson, N M ^a  

^a Xerox Palo Alto Research Center Palo Alto ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

DONOR DOPANTS; INDUCED DEFECTS; N TYPE SILICON;

HYDROGEN;

EID: 77956947114     PISSN: 00808784     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0080-8784(08)62862-8     Document Type: Article

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