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Journal of Applied Physics

Volumn 54, Issue 3, 1983, Pages 1441-1444

Relationship between x-ray-produced holes and interface states in metal-oxide-semiconductor capacitors

(2) Hu, Genda J a Johnson, Walter C a

a PRINCETON UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOS - RADIATION EFFECTS;

CAPACITORS;

EID: 0020718654 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.332169 Document Type: Article

Times cited : (49)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.