Comparison of interface-state buildup in MOS capacitors subjected to penetrating and nonpenetrating radiation

Applied Physics Letters

Volumn 28, Issue 10, 1976, Pages 627-630

  Winokur, Peter S ^a   Sokoloski, Martin M ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008987187     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.88592     Document Type: Article

References (22)

1. For the uv irradiation each photon creates one electron-hole pair.